Untitled
Abstract: No abstract text available
Text: SG40TC10M •特性図 CHARACTERI STI C DI AGRAMS 順方向特性 順電力損失曲線 せん頭サージ順電流耐量 Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Tc＝１７５℃ （MAX） Tc＝１７５℃ （TYP）
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Untitled
Abstract: No abstract text available
Text: Schot t kyBar r i erDi ode T wi n •外観図 SG40TC10M OUTLI NE Package：FTO220G pi n） （3 100V40A （例） ロット記号 Date code t ：mm Uni 4.5 10.０ 品名略号 Type No. 極性 Polarity 0000 G40TC10M ３.45 煙Tj＝１７ ５℃ 煙フルモールド
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G40TC10M
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G S G 4 0 T C 1 OM Unit : mm W eight 1.54g Typ n y H B -ë -(M ) 10 0 V 4 0 A 4.5 Feature >Tj=150°C ' Tj=150°C >37JLÆ-JL/ K ' Full Molded 1 Low Ir=60|jA 1 Resistance for thermal run-away
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FTO-220G
SG40TC10M
50IIz
J533-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE S G 4 0 T C 1 OM 100V 40A Feature • • • • • • T j= i5 r c • 7 J IÆ -J U K • I r=60^A • j r iiìè s b c u c < u •«»W Œ 2kVSSI Tj=150°C Full Molded Low lR=60pA Resistance for thermal run-away
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J533-1
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm S G 40 T C 1 OM o u t lin e Unit : mm Package : FTO-220G o -y H d ^ J 100V 40A 4.5 Feature • Tj=175°C • Tj=175°C • Full Molded • <SIr =60|j A • Low Ir=60|jA • Resistance for thermal run-away • y -h P C .L C D Ç -^ i
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FTO-220G
J533-1)
SG40TC10M
50IIz
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SG40TC10M
Abstract: schottky diode marking A7 marking c1j c1j marking
Text: Schottky Barrier Diode mtm OUTLINE Twin Diode SG 40TC 1OM 100 V 40 A Feature • Tj=175°C • Full Molded • Tj=175°C • IS I r =60|j A • • L o w Ir = 6 0 | j A • Resistance for thermal run-away • Dielectric Strength 2kV U 1C < 11 • ig iU ÎŒ 2kV«IŒ
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SG40TC1OM
FTO-220G
50Hzr
CJ533-1
SG40TC10M
schottky diode marking A7
marking c1j
c1j marking
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SG40TC10M
Abstract: marking KZ diode
Text: Schottky Barrier Diode Twin Diode mtmm Unit: mm Package : FTO-220G S G 40T C 1OM Weight L54g Typ o » h E # (M ) 100V 40A mwm o u t lin e 4.5 Feature • Tj=175°C • 7) IÆ-JUK • 1SlR =60pA • Ü & H tii U L < IA • • • • Tj=175°C Full Molded
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SG40TC1OM
FTO-220G
50Hzr
CJ533-1
SG40TC10M
marking KZ diode
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