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Text: SDF360JEBVGSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JEBVGSN
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Text: SDF360JEAEHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JEAEHU1N
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Text: SDF360JEASGU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JEASGU1N
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Text: SDF360JEBSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JEBSHD1N
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Text: SDF360JECSHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JECSHD1N
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Text: SDF360JECSHSN Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JECSHSN
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Text: SDF360JECSHU1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JECSHU1N
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Text: SDF360JECVHD1N Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC)-55
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SDF360JECVHD1N
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Text: PRODUCT C A T A L O G _ . ^ S l i t r o i l ogy,^ ,nc \K7 :{%f N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0.2 1Q 5DF360 SDF360 SDF360 5DF360 PARAMETER JEA JEB JEC JED • RUGGED PACKAGE •H I - R E L CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS
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5DF360
SDF360
5DF360
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Untitled
Abstract: No abstract text available
Text: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF360
MIL-S-19500
di/dt-100A/
300cS.
03b0fc
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JEC 400
Abstract: N-Channel mosfet 400v 25A SDF360 1D-14a DIODE ED 99
Text: PRODUCT CÂTÂL ^ » l i t r o n DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET 400V, 25A, 0 .2 1 Q SDF360 SDF360 SDF360 SDF360 JEA JEB JEC JED FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS
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SDF360
SDF360
300nS.
JEC 400
N-Channel mosfet 400v 25A
1D-14a
DIODE ED 99
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