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    NSA 2000 inverter

    Abstract: No abstract text available
    Text: ALVC04 HEX INVERTER SCES117D - JULY 1997 - REVISED MARCH 1998 • EP/Cm Enhanced-Performance Implanted CMOS Submicron Process > ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) • Latch-Up Performance Exceeds 250 mA Per


    OCR Scan     		PDF ALVC04 SCES117D MIL-STD-883, NSA 2000 inverter