SN74BCT2410
Abstract: SN74BCT2410DW
Text: SN74BCT2410 11ĆBIT MOS MEMORY DRIVER WITH 3ĆSTATE OUTPUTS SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993 • • • • DW PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
Original
|
PDF
|
SN74BCT2410
11BIT
SCBS119B
MIL-STD-883C,
SN74BCT2410
11-bit
SN74BCT2410DW
|
SN74BCT2410
Abstract: SN74BCT2410DW
Text: SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS SCBS119B – JUNE 1990 – REVISED NOVEMBER 1993 • • • • DW PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
Original
|
PDF
|
SN74BCT2410
11-BIT
SCBS119B
MIL-STD-883C,
SN74BCT2410
11-bit
SN74BCT2410DW
|
SN74BCT2410
Abstract: No abstract text available
Text: SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS SCBS119B – JUNE 1990 – REVISED NOVEMBER 1993 • • • • DW PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
Original
|
PDF
|
SN74BCT2410
11-BIT
SCBS119B
MIL-STD-883C,
SN74BCT2410
11-bit
|
SN74BCT2410
Abstract: No abstract text available
Text: SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS SCBS119B – JUNE 1990 – REVISED NOVEMBER 1993 • • • • DW PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
Original
|
PDF
|
SN74BCT2410
11-BIT
SCBS119B
MIL-STD-883C,
SN74BCT2410
11-bit
|
Untitled
Abstract: No abstract text available
Text: SN74BCT2410 11ĆBIT MOS MEMORY DRIVER WITH 3ĆSTATE OUTPUTS SCBS119B − JUNE 1990 − REVISED NOVEMBER 1993 • • • • DW PACKAGE TOP VIEW State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds
|
Original
|
PDF
|
SN74BCT2410
SCBS119B
MIL-STD-883C,
SN74BCT2410
11-bit
|