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    S9G65 Datasheets (1)

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    S9G65 Toshiba Microwave Power GAAS Fet Scan PDF

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    S3V 68

    Abstract: No abstract text available
    Text: TO SH IBA MICROWAVE POWER GasAs FET Non-M atched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G65 Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 2ñ°C Ì CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT Output Power at VDS=10V Psat 39.5 40.0 dBm Saturation Point


    OCR Scan     		S9G65 32dBm 36dBm, 600MHz S3V 68 PDF

    S9G65

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GasAs FET Non-Matched MICROWAVE SEMICONDUCTOR TECHNICAL DATA S9G65 Preliminary 1. RF PERFORMANCE SPECIFICATIONS Ta= 2fi°C ^ CHARACTERISTICS SYMBOL CONDITION MIN. TYP. MAX. UNIT O utput Power at VDS=10V — dBm Psat 39.5 40.0 Saturation Point


    OCR Scan     		S9G65 32dBm 36dBm, 600MHz S9G65 PDF