Untitled
Abstract: No abstract text available
Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT2.7WLH-LP MLT4WLH-LP MLT6WLH-LP MLT8WLH-LP .43 11.0 .335 B 8.5 .020 MAXIMUM BUNDLE DIAMETER 2.7" [69] 4" [102]
|
Original
|
PDF
|
N41137BS/04
SSECN01042
N41137BS
|
2369
Abstract: marking T4
Text: Tape Information Vishay Siliconix TO-252 DPAK (T4 METHOD) See Note 1 See Note 4 7.5 " 0.1 See Note 4 16 typ Section A−A Direction of Flow Marking On Plastic Upward Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2. 2. Camber not to exceed 1 mm in 100 mm.
|
Original
|
PDF
|
O-252
S-41135--Rev.
19-Jul-04
90-2369-x
16-Ju1-04
2369
marking T4
|
SI7452DP
Abstract: No abstract text available
Text: Si7452DP New Product Vishay Siliconix N-Channel 60-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 60 0.0083 @ VGS = 10 V 19.3 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
|
Original
|
PDF
|
Si7452DP
07-mm
Si7452DP-T1--E3
S-41132--Rev.
07-Jun-04
|
Untitled
Abstract: No abstract text available
Text: Si4354DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.0185 @ VGS = 4.5 V 9.0 D High-Side DC/DC Conversion
|
Original
|
PDF
|
Si4354DY
Si4354DY--E3
Si4354DY-T1--E3
08-Apr-05
|
S-41133
Abstract: No abstract text available
Text: SUD50N06-07L New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)c 0.0074 @ VGS = 10 V 96 APPLICATIONS 0.0088 @ VGS = 4.5 V 88 D Automotive Such As: − High-Side Switch − Motor Drives − 12-V Battery
|
Original
|
PDF
|
SUD50N06-07L
O-252
SUD50N06-07L--E3
08-Apr-05
S-41133
|
Untitled
Abstract: No abstract text available
Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT2.7WLH-LP316 MLT4WLH-LP316 MLT6WLH-LP316 MLT8WLH-LP316 .43 11.0 .335 8.5 .020 MINIMUM BUNDLE DIAMETER 2.0" [51]
|
Original
|
PDF
|
7WLH-LP316
MLT4WLH-LP316
MLT6WLH-LP316
MLT8WLH-LP316
N41138BS/05
SSECN01042
N41138BS
|
Si4354DY
Abstract: No abstract text available
Text: Si4354DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Gen II Power MOSFET D 100% Rg Tested PRODUCT SUMMARY VDS (V) 30 APPLICATIONS rDS(on) (W) ID (A) 0.0165 @ VGS = 10 V 9.5 0.0185 @ VGS = 4.5 V 9.0 D High-Side DC/DC Conversion
|
Original
|
PDF
|
Si4354DY
Si4354DY--E3
Si4354DY-T1--E3
S-41131--Rev.
07-Jun-04
|
s41134
Abstract: No abstract text available
Text: Si4894BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.011 @ VGS = 10 V 12 0.016 @ VGS = 4.5 V 9.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View
|
Original
|
PDF
|
Si4894BDY
Si4894BDY--E3
Si4894BDY-T1--E3
08-Apr-05
s41134
|
U290
Abstract: No abstract text available
Text: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns
|
Original
|
PDF
|
U290/291
U290/U291
08-Apr-05
U290
|
SPD31N05
Abstract: SPU31N05 P-TO252
Text: SPD31N05 SPU31N05 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature Pin 1 G Pin 2 Pin 3 D S Type VDS ID RDS on Package Ordering Code SPD31N05 55 V 31 A 0.04 Ω P-TO252 Q67040 - S4121 - A2
|
Original
|
PDF
|
SPD31N05
SPU31N05
P-TO252
Q67040
S4121
P-TO251
S4113
SPD31N05
SPU31N05
P-TO252
|
Untitled
Abstract: No abstract text available
Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. NOTES: 1. TO BE USED WITH PANDUIT METAL BANDING MBH-MR & MBH-TLR. 2. APPLICATION TOOL: GS4MT, ST2MT, PPTMT, ST3MT, OR HTMT. 3. TOOL TENSION SETTING: 4 TO 8 GS4MT AND PPTMT ONLY
|
Original
|
PDF
|
MTHH-C316
N41131BS/03
S41131
SSECN01042
N41131BS
DC/03A
S41131
|
SUD50N06-07L
Abstract: No abstract text available
Text: SUD50N06-07L New Product Vishay Siliconix N-Channel 60-V D-S , 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)c 0.0074 @ VGS = 10 V 96 APPLICATIONS 0.0088 @ VGS = 4.5 V 88 D Automotive Such As: − High-Side Switch − Motor Drives − 12-V Battery
|
Original
|
PDF
|
SUD50N06-07L
O-252
SUD50N06-07L--E3
S-41133--Rev.
07-Jun-04
SUD50N06-07L
|
U290
Abstract: U291 u2903
Text: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns
|
Original
|
PDF
|
U290/291
U290/U291
S-41139--Rev.
07-Jun-04
U290
U291
u2903
|
S-41135
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix TO-252 DPAK REVERSE LEAD (T4 METHOD) See Note 1 See Note 4 7.5 " 0.1 See Note 4 16 typ Section A−A Direction of Flow Marking On Heatsink Upward Package Orientation NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2.
|
Original
|
PDF
|
O-252
S-41135--Rev.
19-Jul-04
90-2369-x
16-Ju1-04
S-41135
|
|
|
U290
Abstract: Siliconix JFET U291
Text: U290/291 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) U290 −4.0 to −10 3 10 14 U291 −1.5 to −4.5 7 10 14 FEATURES D D D D D Low On-Resistance: U290 < 3 W Fast Switching—tON: 14 ns
|
Original
|
PDF
|
U290/291
U290/U291
18-Jul-08
U290
Siliconix JFET
U291
|
DG3015DB
Abstract: DG3408DB DG3409DB 3408 72733
Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for Analog ICs Part Numbers: DG3015DB DG3408DB DG3409DB MICRO FOOTr 4X4: 0.5-mm PITCH, 0.238-mm BUMP HEIGHT Part Number Method DG3015DB T2 DG3408DB T2 DG3409DB T2 DEVICE ON TAPE ORIENTATION
|
Original
|
PDF
|
DG3015DB
DG3408DB
DG3409DB
238-mm
Specification--PACK-0023-5
S-41130,
14-Jun-04.
DG3015DB
DG3408DB
DG3409DB
3408
72733
|
Si4894BDY
Abstract: 4113-4
Text: Si4894BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.011 @ VGS = 10 V 12 0.016 @ VGS = 4.5 V 9.8 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View
|
Original
|
PDF
|
Si4894BDY
Si4894BDY--E3
Si4894BDY-T1--E3
S-41134--Rev.
07-Jun-04
4113-4
|
Untitled
Abstract: No abstract text available
Text: r ^S-13. Si Photodiode Arrays with 35.38 and 46 Elements Wide active area, for multichannel spectrophotometry The S4111, S4112, S4113 and S4114 series Si photodiode arrays have DIP-type ceramic cases with quartz glass windows. They are an excellent choice for very-low-light applications such as spectrophotometery. They
|
OCR Scan
|
PDF
|
S4111,
S4112,
S4113
S4114
S41todiodes
S2381
S2384
S2385
S3884
|
S4112
Abstract: S25920
Text: Other Types of Si Photodiode S i P h o t o d i o d e s W it h P r e - a m p lif ie r Atfive Area TyceNo F oas SSRStMfy Waueiength Spectral Response Rango X dm rnm) 190 to 1100 S1406-04 320 to 1100 2.4x2.4 S 1406-06 SSS80 960 «2.54 320 to 1060 920 High-speed response
|
OCR Scan
|
PDF
|
S1406-03
S1406-04
SSS80
S5591
S3887
S6204
S2281
S2261-01
S2281-04
S4111
S4112
S25920
|
S7585
Abstract: s4114 driver
Text: Photodiode Arrays/Image Sensors_ 16-element Si Photodiode Arrays S5668 Series For various measuring purpose This S5668 series devices are 16-element photodiode arrays with a sensitive area of 1.175 mm (W x 2.0 mm (H) per element, formed at a pitch of 1.575 mm.
|
OCR Scan
|
PDF
|
16-element
S5668
S5668-11/-12)
46-element
spe29,
S7585
S3805
S4529
S7585
s4114 driver
|
S4113
Abstract: No abstract text available
Text: 14E D INTEGRATED DEVICE • 4025771 0003377 2 ■ CMOS SYNCHRONOUS STATIC RAM W / TRANSPARENT OUTPUTS AND OE 64K 16Kx 4-BIT ADVANCE INFORMATION IDT 61595S IDT 61595L T-V4-Z3 -ID FEATURES: DESCRIPTION: • 16K x 4-Bit Organization • High-speed Cycle Time
|
OCR Scan
|
PDF
|
61595S
61595L
MIL-STD-883,
IDT61595
S4-112
G00337Ö
IDT61595S/IDT61S95LCMOS
ANDOUTPUTENABLE64K
16Kx4-BIT)
S4-113
S4113
|
C2625
Abstract: No abstract text available
Text: CMOS SYNCHRONOUS STATIC RAM W/ TRANSPARENT OUTPUTS A N DO E 64K 16Kx 4-BIT ADVANCE INFORMATION IDT 61595S IDT 61595L FEATURES: DESCRIPTION: • 16K x 4-Bit Organization • High-speed Cycle Time — Commercial1 . 25ns — Military: 30ns • Address, Data and W Registered Inputs
|
OCR Scan
|
PDF
|
MIL-STD-883,
61595S
61595L
IDT61595
536-blt
S4-112
IDT61595S/IDT61595L
S4-113
C2625
|
S4529
Abstract: C2334 s4114 driver S3805 nm800a
Text: Photodiode Arrays/Image Sensors 16-element Si Photodiode Arrays S5668 Series For various measuring purpose This S5668 series devices are 16-eiement photodiode arrays with a sensitive area of 1.175 mm (W x 2.0 mm (H) per element, formed at a pitch of 1.575 mm.
|
OCR Scan
|
PDF
|
16-element
S5668
16-eiement
S5668-11/-12)
S6454)
46-element
S3805
S4529
S3805
S4529
C2334
s4114 driver
nm800a
|
