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    S3C marking

    Abstract: No abstract text available
    Text: P hilips Sem iconductors bbS 3T31 0033540 N APX f lf l4 ANER Product specification PHILIPS/DISCRETE N-channel field-effect transistors PARAMETER • Low leakage level typ. 500 fA SYMBOL • High gain ±VDS drain-source voltage loss drain current • Low cut-off voltage.


    OCR Scan     		PDF BF556A BF556B BF556C BF556B 23SHt. bbS3031 S3C marking

    BYW29

    Abstract: LC1 Clip M2749
    Text: N AMER PHILIPS/DISCRETE 25E ß • bb53T31 □ 02273*1 Q ■ B Y W 2 9 SERIES ^ 7 -0 3 -/7 ULTRA FAST RECO VER Y RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and soft-recovery


    OCR Scan     		PDF bb53T31 G02273Â BYW29 T-03-17 LC1 Clip M2749

    42t SOT23

    Abstract: BF556A BF556B BF556C marking codes power devices philips marking 42t Philips KS 40
    Text: Philips Semiconductors • btjS3T31 0DB3540 SÛM ■ APX „ _ , Product specification N AHER P H I L I P S / D I S C R E T E N-channel field-effect transistors QUICK REFERENCE DATA FEATURES • Low leakage level typ. 500 fA • High gain • Low cut-off voltage.


    OCR Scan     		PDF btjS3T31 0DB3540 BF556A BF556B BF556C kbS3131 42t SOT23 BF556C marking codes power devices philips marking 42t Philips KS 40