WS128N
Abstract: WS128P FTA084 S29WS064J S29WS128J TLA084 S29WS128J0PBFW010
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA May 19, 2006 Advanced Change Notification No: Subject: 2609 Obsolescence of the S29WS128J, S29WS064J, S71WS128J, and S71WS064J Spansion LLC is announcing the planned obsolescence of the S29WS128J, S29WS064J, S71WS128J,
|
Original
|
PDF
|
S29WS128J,
S29WS064J,
S71WS128J,
S71WS064J
S71WS064J
WS128N
WS128P
FTA084
S29WS064J
S29WS128J
TLA084
S29WS128J0PBFW010
|
S29WS064J
Abstract: 2222H
Text: Am29BDS320G Data Sheet The Am29BDS320G has been retired and is not recommended for designs. For new and current designs, S29WS064J supersedes Am29BDS320G and is the factory-recommended migration path for this device. Please refer to the S29WS064J data sheet for specifications and ordering information.
|
Original
|
PDF
|
Am29BDS320G
S29WS064J
27243B2
2222H
|
Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM PRELIMINARY Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
|
Original
|
PDF
|
S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
|
SOC008
Abstract: S29GL01GP UNE008 S99FL004A0013 S29WS128N S70GL01GN00 2646 S25FL004A0LMAI001 S25FL004A0LNFI003 S25FL004A
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 2, 2007 Advanced Change Notification No: Subject: 2646 Obsolescence of the products listed below Spansion LLC is announcing the obsolescence of all valid combinations of the products listed below.
|
Original
|
PDF
|
S25FL004A
50MHz
S70GL01GN
SOC008:
UNE008:
64-Ball
Am29BDS320G
Am29BDS128H
004A0LMFI003P
S25FL004A0LNAI000
SOC008
S29GL01GP
UNE008
S99FL004A0013
S29WS128N
S70GL01GN00
2646
S25FL004A0LMAI001
S25FL004A0LNFI003
S25FL004A
|
S29WS128J-MCP
Abstract: S29WS128J S29WS-J S29WS064J
Text: S29WS-J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet S29WS-J Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
|
Original
|
PDF
|
S29WS-J
16-Bit)
S29WS-J
S29WS128J-MCP
S29WS128J
S29WS064J
|
SPANSION S29GL128
Abstract: 064J S29GL128 S29WS064J S29WS128J S29WS256P S29WS-P
Text: Understanding AC Characteristics Application Note By Russell Hanabusa 1. Introduction Obtaining the maximum performance from Flash devices requires a clear understanding of their AC characteristics. AC characteristics define the bus cycle timing of the Flash. This application note provides a
|
Original
|
PDF
|
|
SA266-4
Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 S71WS-J FBGA 12x12 TRAY
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP Package-on-Package (PoP) 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
|
Original
|
PDF
|
S71WS-J
16-bit)
SA266-4
S71WS128JB0
S71WS128JC0
S71WS256JC0
FBGA 12x12 TRAY
|
COSMO MARKING
Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
|
Original
|
PDF
|
S71WSxxxJ
16-bit)
80-ball
66MHz
S71WS
S71WS256/128/064J
COSMO MARKING
S71WS128JB0
S71WS128JC0
S71WS256JC0
WS128J
cosmo MARKING CODE
COSMO DEVICE MARKING
COSMO DEVICE MARKING DATE
cosmoram synchronous
|
Untitled
Abstract: No abstract text available
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Publication Number S29WS-J_00 Revision A Amendment 5 Issue Date March 31, 2006 Notice On Data Sheet Designations 6SDQVLRQ //& LVVXHV GDWD VKHHWV ZLWK $GYDQFH ,QIRUPDWLRQ RU 3UHOLPLQDU\ GHVLJQDWLRQV WR DGYLVH
|
Original
|
PDF
|
S29WS128J/064J
16-Bit)
S29WS-J
|
064J
Abstract: 25D1 3G2H 8-R 2R2 VBR080 WZR device marking marking w53
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory Data Sheet Distinctive Characteristics $UFKLWHFWXUDO $GYDQWDJHV +DUGZDUH )HDWXUHV 6LQJOH YROW UHDG SURJUDP DQG HUDVH WR YROW
|
Original
|
PDF
|
S29WS128J/064J
16-Bit)
S29WS-J
064J
25D1
3G2H
8-R 2R2
VBR080
WZR device marking
marking w53
|
Macronix Lot Identifier
Abstract: sja2510 ARM str912 external memory interface ARM LPC2148 embedded C language LPC2148 instruction set assembly language program LPC2148 embedded c language ARM LPC2148 instruction set TMS470 Hex Converter st jtag sequence ARM LPC2138 embedded C language
Text: J-Flash ARM User guide of the stand-alone flash programming software Software Version 4.10 Manual Rev. 3 Date: September 18, 2009 Document: UM08003 A product of SEGGER Microcontroller GmbH & Co. KG www.segger.com 2 Disclaimer Specifications written in this document are believed to be accurate, but are not guaranteed to be entirely free of error. The information in this manual is subject to
|
Original
|
PDF
|
UM08003
UM08003)
Macronix Lot Identifier
sja2510
ARM str912 external memory interface
ARM LPC2148 embedded C language
LPC2148 instruction set assembly language program
LPC2148 embedded c language
ARM LPC2148 instruction set
TMS470 Hex Converter
st jtag sequence
ARM LPC2138 embedded C language
|
Untitled
Abstract: No abstract text available
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this
|
Original
|
PDF
|
S71WS-J
16-bit)
|
Untitled
Abstract: No abstract text available
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO
|
Original
|
PDF
|
S71WS-J
16-bit)
|
Untitled
Abstract: No abstract text available
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Characteristics Single 1.8 volt read, program and erase (1.65 to
|
Original
|
PDF
|
S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mb/
WS064J:
8Mb/24Mb/24Mb/8Mb
S29WS128J/064J
|
|
|
S32HMD24926BAEA20
Abstract: V20810-F6096-D670 5185941F60 DS4282-4 S30ML02GP S71PL129NB0HFW4B0 gwj7 Spansion S99 S71VS064KB0ZJK1B0 S19MN02GP30TFP00
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA August 19, 2010 Advanced Change Notification No: Subject: 2806 Obsolescence of the products listed below Product Identification: 1201-2648.1 43470D3 43470G6 4347255 4347289
|
Original
|
PDF
|
43470D3
43470G6
5103535B84
5185941F60
5199213K04
AM29LV640GU53RPCI
DIG-00128-005
DS42824
PO71GL512NC0BAWEZ
PO71WS256NDOBAEE7
S32HMD24926BAEA20
V20810-F6096-D670
5185941F60
DS4282-4
S30ML02GP
S71PL129NB0HFW4B0
gwj7
Spansion S99
S71VS064KB0ZJK1B0
S19MN02GP30TFP00
|
MSP14LV160
Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Text: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ
|
Original
|
PDF
|
AF9708/09/09B/10/23
nearest09
AF9709B/09C
AF9723
AF9708
TE004-44PL-04
AF9709
MSP14LV160
MSP54LV100
MCF10P-128MS
70f3350GC
63a52
95f264k
HY27US08121B
MSP55LV128
MSP55lv512
fujitsu msp55lv512
|
Untitled
Abstract: No abstract text available
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Notice to Readers: This document contains information on one or more products under development at Spansion LLC. The information is intended to
|
Original
|
PDF
|
S29WS128J/064J
16-Bit)
S29WS128J/064J
128/64is
|
4a2g
Abstract: L8212 S71WS-J
Text: S71WS-J Based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW LQGLFDWHV VWDWHV WKH FXUUHQW WHFKQLFDO
|
Original
|
PDF
|
S71WS-J
16-bit)
4a2g
L8212
|
Untitled
Abstract: No abstract text available
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM ADVANCE Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
|
Original
|
PDF
|
S71WSxxxJ
16-bit)
66MHz
S71WS
S71WS256/128/064J
|
S29WS128J-MCP
Abstract: No abstract text available
Text: S29WS128J/064J 128/64 Megabit 8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory ADVANCE INFORMATION Distinctive Characteristics Architectural Advantages Performance Charcteristics Single 1.8 volt read, program and erase (1.65 to
|
Original
|
PDF
|
S29WS128J/064J
16-Bit)
WS128J:
16Mb/48Mb/48Mbovided
WS128J/064J
S29WS128J-MCP
|
