29F400-70
Abstract: 29f400 programming 29F400 9F400 29F400-90
Text: H ig h P erfo rm a n ce 512KX8/256KX16 5 V CMOS Flash EEPROM - A S29F400 II J ill r 5 1 2 K x 8 / 2 5 6 K x l 6 CMOS Flash EEPROM Preliminary information Features • O rganization: 5 1 2 K X 8 or 2 5 6 K x l 6 • Sector architecture - One 16K; two 8K; one 32K; and seven 64K byte sectors
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AS29F400
512KX8/256KX16
S12KX8/256KX16
512KX8
256Kxl6
cycl9F400T-70TI
AS29F400T-90TC
AS29F400T-90TI
AS29F400T-120TC
AS29F400T-120TI
29F400-70
29f400
programming 29F400
9F400
29F400-90
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29F400-70
Abstract: programming 29F400 29f400 256KX16 AS29F400T-70S1 T00344 XX11110 JS2617 29F400-90
Text: A H i y l i P c r f o r n i a i H i' S I2K X 8/2S 6K X SV CM O S •■ I6 Flash F.FPR O M A S29F400 Î I 2 K X 8 / 2 5 6 K X 16 C M O S F l u s h F E P R O M Preliminary information Features • Organization: 512KX8 or 256KX16 • Sector architecture • Low pow er consum ption
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AS29F400
512KX8
256KX16
wr-120TC
AS29F400T-150TC
AS29F400T-70TI
AS29F400T-90TI
AS29F400T-I20TI
AS29F400T-I50T1
AS29F400B-55SC
29F400-70
programming 29F400
29f400
256KX16
AS29F400T-70S1
T00344
XX11110
JS2617
29F400-90
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Untitled
Abstract: No abstract text available
Text: Preliminary information Features • O r g a n iz a t io n : 5 1 2 K x 8 o r 2 5 6 K x 16 • L o w p o w e r c o n s u m p tio n • S e c to r a r c h ite c tu r e - 3 S m A m a x im u m re a d c u rre n t - 60 m A m a x im u m p ro g r a m c u rre n t - O n e 16K; tw o 8K; o n e 32K; a n d seven 64K b y te sectors
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S29F4O0T-55TC
S29F4Q
-150T3
S29F400T-
9F400B
-150SI
S29F400T
-150SI
AS29F400B-5
S29F400T-5
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Untitled
Abstract: No abstract text available
Text: Hiyli P e r f o r m a n c i 1 •■ S29F400 A S I 2 K x 8 / 2 S6 K X I 6 SV C M O S F l a s h F F P R O M S I 2 K x 8 / 2 5 6 K x l 6 CMOS Flush FFPROM Prelim inary inform ation Features • Organization: 512KX8 or 256KX16 • Sector architecture • L o w p o w e r c o n s u m p tio n
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AS29F400
512KX8
256KX16
ip9F400T-1SOTC
AS29F400T-ISOU
AS29F400B-55SC
AS29F400B*
AS29F400B-70SI
AS29F400B-90SC
AS29F400B-90SI
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Untitled
Abstract: No abstract text available
Text: High Performance 512KX8 / 2 5 6 KX16 5V CMOS Flash EEPROM •■ | | S29F400 II 5 Ï2 K X 8 /2 5 6 K X 1 6 CMOS Flash EEPROM Preliminary information Features • O rg a n iza tio n : 5 1 2 K X 8 o r 2 5 6 K x l 6 • L o w p o w e r c o n s u m p tio n
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512KX8
AS29F400
-90SI
-120SI
S29F400B
-150SC
29F400B
-150SI
29F400T-70SC
S29F400T
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Untitled
Abstract: No abstract text available
Text: H igh p erfo rm an ce 512Kx8/256Kxl6 5V CMOS Flash EEPROM U A S 29F 400 A 512Kx8/256Kx 16 CMOS Flash EEPROM Preliminary information Features • O r g a n iz a tio n : 5 1 2 K X 8 o r 2 5 6 K X 1 6 • L o w p o w e r c o n s u m p t io n • S e c to r a r c h it e c tu r e
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512Kx8/256Kxl6
512Kx8/256Kx
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TMS29F400B
Abstract: No abstract text available
Text: S29F400T, S29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH MEMORIES * Single Power Supply Supports 5 V ±10% Read/Write Operation • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
4073307/B
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t4.00
Abstract: No abstract text available
Text: High Performa ih c S29F400 A SI2KX8/2S6KXI6 ÇV C M O S F l , i s h F I P R O M S I 2 K x 8 / 2 S 6 K x 16 CM O S F lash FFPK O M Prelim inary inform ation Features •O rg an iz atio n : 5 1 2K x8 or 2 5 6 K x 16 • Sector architecture • Low p o w er consum ption
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AS29F400
t4.00
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