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    S20S30 Search Results

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    S20S30 Price and Stock

    Toshiba America Electronic Components CUHS20S30,H3F

    DIODE SCHOTTKY 30V 2A US2H
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    DigiKey CUHS20S30,H3F Cut Tape 20,567 1
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    CUHS20S30,H3F Digi-Reel 20,567 1
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    CUHS20S30,H3F Reel 18,000 3,000
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    Avnet Americas CUHS20S30,H3F Reel 3,000 20 Weeks 3,000
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    Mouser Electronics CUHS20S30,H3F 62,238
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    TTI CUHS20S30,H3F Reel 3,000
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    Samtec Inc IDSS-20-S-30.00

    INSULATION DISPLACEMENT SOCKET C
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    DigiKey IDSS-20-S-30.00 Bulk 1
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    Mouser Electronics IDSS-20-S-30.00
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    Master Electronics IDSS-20-S-30.00
    • 1 $17.91
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    Sager IDSS-20-S-30.00 1
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    Samtec Inc IDSS-20-S-30.00-G

    INSULATION DISPLACEMENT SOCKET C
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    DigiKey IDSS-20-S-30.00-G Bulk 1
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    Mouser Electronics IDSS-20-S-30.00-G
    • 1 $14.32
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    • 1000 $7.31
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    Master Electronics IDSS-20-S-30.00-G
    • 1 $17.55
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    Sager IDSS-20-S-30.00-G 1
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    Samtec Inc IDSS-20-S-30.00-T-G-ST4

    Cable Assembly Flat Ribbon 0.762m 28AWG 20 POS IDC Connector SKT IDT Bulk - Bulk (Alt: IDSS-20-S-30.00-T-)
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    Master Electronics IDSS-20-S-30.00-T-G-ST4
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    Sager IDSS-20-S-30.00-T-G-ST4
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    Toshiba America Electronic Components CUHS20S30,H3F(T

    Schottky Rectifier, 30V, 2A, Sod-323He Rohs Compliant: Yes |Toshiba CUHS20S30,H3F(T
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    Newark CUHS20S30,H3F(T Cut Tape 2,950 5
    • 1 $0.408
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    • 1000 $0.108
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    Chip1Stop CUHS20S30,H3F(T Cut Tape 83
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    EBV Elektronik CUHS20S30,H3F(T 12,000 15 Weeks 3,000
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    S20S30 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    S20S30 Mospec SCHOTTKY BARRIER RECTIFIERS(20A,30-60V) Scan PDF
    S20S300A Tamura Hall Effect Current Sensors Original PDF
    S20S30A Mospec Switchmode Power Rectifier Scan PDF
    S20S30C Mospec Switchmode Power Rectifier Scan PDF
    S20S30CR Mospec Schottky Barrier Rectifiers Original PDF
    S20S30D Mospec Switchmode Power Rectifier Scan PDF

    S20S30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S20S30

    Abstract: S20S60
    Text: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF S20S30 S20S60 Flammabi14 S20S50-60 S20S30-45 S20S30-S20S45 S20S60

    Untitled

    Abstract: No abstract text available
    Text: S20S30PT CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 45 Volts S20S45PT CURRENT 20 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction


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    PDF S20S30PT S20S45PT 300uS 100oC

    S20S30GP

    Abstract: S20S35GP S20S40GP S20S45GP
    Text: S20S30GP CHENMKO ENTERPRISE CO.,LTD THRU SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 30 - 45 Volts S20S45GP CURRENT 20 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction


    Original
    PDF S20S30GP S20S45GP 300uS 100oC S20S30GP S20S35GP S20S40GP S20S45GP

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF S20S30 S20S60 S20S50-60 S20S30-45 S20S30-S20S45 S20S50-S20S60

    40Cr

    Abstract: 45CR S20S30CR S20S60CR 50-CR
    Text: MOSPEC 2 S20S30CR Thru S20S60CR Switchmode Power Rectifiers I2 PAK surface Mount Power Package SCHOTTKY BARRIER RECTIFIERS The I PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have


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    PDF S20S30CR S20S60CR O-262 S20STC S20S30CR-45CR S20S50CR-60CR 40Cr 45CR S20S60CR 50-CR

    40-CR

    Abstract: No abstract text available
    Text: MOSPEC 2 S20S30CR Thru S20S60CR Switchmode Power Rectifiers I2 PAK surface Mount Power Package SCHOTTKY BARRIER RECTIFIERS The I PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have


    Original
    PDF S20S30CR S20S60CR O-262 S20S30CR-S20S45CR S20S50CR-S20S60CR S20S30CR-S20S45CR 40-CR

    S20S30

    Abstract: S20S60
    Text: MOSPEC S20S30 thru S20S60 Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF S20S30 S20S60 S20S30-S20S45 S20S50-S20S60 S20S60

    Untitled

    Abstract: No abstract text available
    Text: DC DC Part Num S20 - SERIES 20W HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges 1000 Vdc Output Isolation Continuous Short Circuit Protection


    Original
    PDF 0-60Vdc 36-72Vdc S20-S90/C/Y

    L18P

    Abstract: L07P025D15 L08P050D15 S22P006S05 L08P150D15 L10P025D15 hall current sensor 3A L18P040D15 Tamura L18P020D15 L07P015
    Text: Hall Effect Current Sensors www.tamuracorp.com 3 to 25 Amp Applications –– Open Loop • Compact PCB Mount Design • Dual Integrated Primary • Withstanding Voltage of 2000 Vrms • 3A - 25A with a Bipolar ±15VDC Supply Voltage • Low Cost Specifications Measured at 25°C, RL-10KΩ Vcc=+15V


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    PDF 15VDC RL-10K L07P003D15 L07P005D15 L07P010D15 L07P015D15 L07P025D15 L10P025D15 L07P020D15 200kHz L18P L07P025D15 L08P050D15 S22P006S05 L08P150D15 L10P025D15 hall current sensor 3A L18P040D15 Tamura L18P020D15 L07P015

    Untitled

    Abstract: No abstract text available
    Text: American Power Design, Inc. "The best high voltage design solution" S20 SERIES 20 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges


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    PDF 36-72Vdc S20-D150/C/Y

    S22P025S05

    Abstract: No abstract text available
    Text: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 50 to 300 Amp Applications –– Closed Loop • Panel Mount Design • Current Output type • Very High Linearity • +12V or +15V Supply Voltage • CE EN50178 pending Specifications Measured at 25˚C, RL±15KΩ, Vcc=+12V


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    PDF EN50178 50/60Hz) 500VDC 000VACrms 200kHz S22P025S05 S22P025S05

    Untitled

    Abstract: No abstract text available
    Text: SDB20S30 thinQ!¥ SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23 IF


    Original
    PDF SDB20S30 P-TO220-3 Q67040-S4374 S20S30

    Untitled

    Abstract: No abstract text available
    Text: American Power Design, Inc. "The best high voltage design solution" S20 SERIES 20 WATT HIGH VOLTAGE DC/DC CONVERTERS FEATURES * Customer Selects Output Voltage * * * * * * * Outputs to 1000 Vdc High Power Density Single and Dual Outputs Ultra Wide Input Ranges


    Original
    PDF 36-72Vdc S20-S90/C/Y

    D20S30

    Abstract: SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd
    Text: SDP20S30 SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on Qc 23 IF 2x10 P-TO220-3.SMD the switching behavior


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    PDF SDP20S30 SDB20S30 P-TO220-3 P-TO220-3-1. Q67040-S4419 Q67040-S4374 D20S30 SDP20S30 Q67040-S4374 Q67040-S4419 S20S30 SDB20S30 smd diode marking code UJ diode smd marking code 435 300V Schottky Diode smd

    s10p40

    Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK


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    PDF OD-123 S15P20 S15P30 S15P40 s10p40 SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35

    EN50178

    Abstract: S21Z100D15 S22P025S05 S20S050A S20S100A S21Z150D15 S21Z200D15 S21Z300D15
    Text: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 100 to 300 Amp Applications –– Closed Loop • PCB Mount Design • Current Output type • Very High Linearity • ±15V Supply Voltage • CE EN50178 pending Specifications Measured at 25˚C, RL-10KΩ, VCC=+15V


    Original
    PDF EN50178 RL-10K S21Z100D15 S21Z150D15 S21Z200D15 S21Z300D15 100mA 150mA 000VACrms 200kHz EN50178 S21Z100D15 S22P025S05 S20S050A S20S100A S21Z150D15 S21Z200D15 S21Z300D15

    D20S30

    Abstract: Q67040-S4419 Q67040-S4374 S20S30 SDB20S30 SDP20S30
    Text: SDP20S30 SDB20S30 Preliminary data Silicon Carbide Schottky Diode  Revolutionary semiconductor Product Summary material - Silicon Carbide  No reverse recovery Qc 23  No temperature influence on IF 2x10 P-TO220-3.SMD the switching behavior V 300 VRRM  Switching behavior benchmark


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    PDF SDP20S30 SDB20S30 P-TO220-3 P-TO220-3-1. Q67040-S4419 D20S30 D20S30 Q67040-S4419 Q67040-S4374 S20S30 SDB20S30 SDP20S30

    Untitled

    Abstract: No abstract text available
    Text: MOSPEC Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high


    Original
    PDF S20S30 S20S60

    irf 940

    Abstract: smd diode marking code UJ
    Text: SDB20S30 thinQ! SiC Schottky Diode Silicon Carbide Schottky Diode • Revolutionary semiconductor Product Summary material - Silicon Carbide 1 • No reverse recovery 2 3 • No temperature influence on V 300 VRRM • Switching behavior benchmark Qc 23


    Original
    PDF SDB20S30 P-TO220-3 S20S30 Q67040-S4374 irf 940 smd diode marking code UJ

    EN50178

    Abstract: EN-50178 L08P200D15 L08P150D15 S22P006S05 L10P010D15 L10P005D15 L01Z600S05 L08P100D15 L10P025D15
    Text: Hall Effect Current Sensors w w w. t a m u r a c o r p . c o m 3 to 30 Amp Applications –– Open Loop • Compact PCB Mount Design • Voltage Output type • Withstanding Voltage of 2500 Vrms • Very High Linearity • ±15V Supply Voltage • CE EN50178 pending


    Original
    PDF EN50178 RL-10K L10P003D15 L10P005D15 L10P010D15 L10P015D15 L10P020D15 L10P025D15 L10P030D15 000VACrms EN50178 EN-50178 L08P200D15 L08P150D15 S22P006S05 L10P010D15 L10P005D15 L01Z600S05 L08P100D15 L10P025D15

    S20S30

    Abstract: S20S45 S20S50 S20S60
    Text: & MOSPEC S20S30 Thru S20S60 SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D2 PAK SURFACE MOUNT POWER PACKAGE The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan
    PDF S20S30 S20S60 O-220 S20S50 S20S45 S20S50 S20S60

    S20S30

    Abstract: S20S45 S20S50 S20S60
    Text: Bk MOSPEC S20S30 Thru S20S60 SWITCHMODE POWER RECTIFIERS SCHOTTKY BARRIER RECTIFIERS D2 PAK SURFACE MOUNT POWER PACKAGE The D2 PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan
    PDF S20S30 S20S60 O-220 S20S50 S20S45 S20S50 S20S60

    DG172AP

    Abstract: Dg172bp DG172
    Text: DG172 Monolithic 4-Channel PMOS Analog Switch 0 W Siliconix JO B incorporated FEATURES BENEFITS APPLICATIONS • TTL, C M O S Direct • Easy Interface • • R educes External In terface • Am plifiers Protection C om ponents • V o ltag e Limiting Diodes


    OCR Scan
    PDF DG172 DG172AP Dg172bp