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    S1304 Search Results

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    S1304 Price and Stock

    Same Sky CFM-9238S-130-410

    FAN AXIAL 92X37.5MM 12VDC WIRE
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    DigiKey CFM-9238S-130-410 Box 193 1
    • 1 $10.35
    • 10 $9.225
    • 100 $8.224
    • 1000 $7.58862
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    Century Spring Corp S-1304CS

    COMP O= .500,L= .56,W= .054
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    DigiKey S-1304CS Box 81 1
    • 1 $7.5
    • 10 $7.5
    • 100 $4.1896
    • 1000 $3.3075
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    CUI Inc VMS-130-48

    AC/DC CONVERTER 48V 130W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey VMS-130-48 Box 25 1
    • 1 $53.14
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    Mouser Electronics VMS-130-48 23
    • 1 $53.14
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    Newark VMS-130-48 Bulk 25 1
    • 1 $84.9
    • 10 $82.65
    • 100 $73.73
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    Chip1Stop VMS-130-48 25
    • 1 $64.8
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    Master Electronics VMS-130-48
    • 1 -
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    • 100 $52.07
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    CUI Inc VMS-130-48-BP

    AC/DC CONVERTER 48V 130W
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    DigiKey VMS-130-48-BP Tray 15 1
    • 1 $59.52
    • 10 $59.52
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    Mouser Electronics VMS-130-48-BP 16
    • 1 $59.52
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    Newark VMS-130-48-BP Bulk 16 1
    • 1 $81.66
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    Chip1Stop VMS-130-48-BP 16
    • 1 $72.6
    • 10 $72.6
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    Neutron USA VMS-130-48-BP 47
    • 1 $147.33
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    Sager VMS-130-48-BP 1
    • 1 $79.37
    • 10 $74.41
    • 100 $68.03
    • 1000 $68.03
    • 10000 $68.03
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    CUI Inc VMS-130-48-CNF

    AC/DC CONVERTER 48V 130W
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    DigiKey VMS-130-48-CNF Tray 10 1
    • 1 $63.52
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    Mouser Electronics VMS-130-48-CNF 9
    • 1 $63.52
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    Newark VMS-130-48-CNF Bulk 12 1
    • 1 $85.36
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    Chip1Stop VMS-130-48-CNF 12
    • 1 $77.5
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    Master Electronics VMS-130-48-CNF
    • 1 -
    • 10 $71.15
    • 100 $69.73
    • 1000 $69.73
    • 10000 $69.73
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    Sager VMS-130-48-CNF 1
    • 1 $84.7
    • 10 $79.41
    • 100 $72.6
    • 1000 $72.6
    • 10000 $72.6
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    Find more S1304 price and stock on Findchips.com

    S1304 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUZ31

    Abstract: No abstract text available
    Text: SIPMOS Power Transistor BUZ 31 ● N channel ● Enhancement mode ● Avalanche-rated Type VDS ID RDS on Package 1) Ordering Code BUZ 31 200 V 13.5 A 0.2 Ω TO-220 AB C67078-S1304-A2 Maximum Ratings Parameter Symbol Values Continuous drain current, TC = 28 ˚C


    Original     		PDF O-220 C67078-S1304-A2 BUZ31

    Untitled

    Abstract: No abstract text available
    Text: SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 96 Qgs (nC) 11 Qgd (nC) 21 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.


    Original     		PDF SiHF15N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQR50N04-3m8 www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • 40 RDS(on) () at VGS = 10 V 0.0038 ID (A) 50 Configuration Single TO-252 Reverse Lead DPAK TrenchFET Power MOSFET


    Original     		PDF SQR50N04-3m8 O-252 AEC-Q101 O-252 SQR50N04-3m8-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		PDF SiA910EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD35N10-26P www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD35N10-26P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiR426DP Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A) 0.0105 at VGS = 10 V 30a 0.0125 at VGS = 4.5 V 30a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see


    Original     		PDF SiR426DP SiR426DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHP22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP22N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD23N06-31 www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD23N06-31 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD19P06-60 www.vishay.com Vishay Siliconix P-Channel 60 V D-S 150 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD19P06-60 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2377EDS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2377EDS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    f 0452 N-Channel MOSFET

    Abstract: No abstract text available
    Text: SQD100N03-3m2L www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0032 • AEC-Q101 Qualifiedd RDS(on) () at VGS = 4.5 V


    Original     		PDF SQD100N03-3m2L AEC-Q101 O-252 O-252 SQD100N03-3m2L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A f 0452 N-Channel MOSFET

    HX8369

    Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
    Text: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010


    Original     		PDF HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A

    Untitled

    Abstract: No abstract text available
    Text: SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.28 Qg max. (nC) 96 Qgs (nC) 11 Qgd (nC) 21 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHP15N65E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 700 RDS(on) max. at 25 °C () VGS = 10 V 0.18 Qg max. (nC) 110 Qgs (nC) 15 Qgd (nC) 32 Configuration Single Note * Lead (Pb)-containing terminations are not RoHS-compliant.


    Original     		PDF SiHF22N65E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		PDF SiA910EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS435DNT Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES • TrenchFET Gen III P-Channel Power MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)a 0.0054 at VGS = - 4.5V - 30a 0.0060 at VGS = - 3.7 V - 30a 0.0083 at VGS = - 2.5 V - 30a


    Original     		PDF SiS435DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SUD40N08-16 www.vishay.com Vishay Siliconix N-Channel 80 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SUD40N08-16 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    buz31

    Abstract: No abstract text available
    Text: SIEM ENS SIPMOS Power Transistor • • • BUZ 31 N channel Enhancem ent mode Avalanche-rated Type Vos Id ^DS on Package 1> Ordering Code BUZ 31 200 V 13.5 A 0.2 a TO-220 AB C67078-S1304-A2 Maxim um Ftatings Parameter Sym bol Continuous drain current, Tc = 28 'C


    OCR Scan     		PDF O-220 C67078-S1304-A2 buz31

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power MOS Transistor VDS lD = 200 V = 1 3 .5 A ^ D S o n = • 0 -2 BUZ 31 TO -220 AB Q N channel • Enhancement mode • Avalanche-proof • Package: TO-220 A B 1) Type Ordering code BUZ 31 C67078-S1304-A2 G Maximum Ratings Parameter Symbol


    OCR Scan     		PDF O-220 C67078-S1304-A2

    Untitled

    Abstract: No abstract text available
    Text: TOP TOUCH LOCKING CONNECTOR HIROSE Original General ^ - The 1300 series top touch locking 24-contact connec­ tors are of the same design as the well-known 1600


    OCR Scan     		PDF 24-contact P-1304-CT S-1304-CT P-1306-CT S-1306-CT P-1304-DB S-1304-DB P-1306-DBI09) S-1306-DB CL213-0614-5

    Crystal washer

    Abstract: No abstract text available
    Text: Ld APPLICATION 3 B REVISIONS NEXT ASSY USED ON REV DESCRIPTION DATE APPROVED FINAL 1304-01 A B 3.3.1 WAS +5.00VDC ±25% REVISED MECH DIM ADDED DIM TO TERMINAL DIA/ WASHER THICKNESS REVISED MECH DIM / ADDED 3.1.3.4 2 /2 4 /9 9 3/1 2 /9 9 LB LB 6 /1 0 /9 9 LB


    OCR Scan     		PDF 00VDC S1304E12 QQ-N-290 S1304E13 Crystal washer

    P-1345B-CTA

    Abstract: S-1308-SB09 P-1328-CTA S-1324-STA P-1360WE P-1334B-ST P-1324-CTA P-1334-CTA S-1324-CTA P-1360B-SB
    Text: 1300 SERIES RECTANGULAR CONNECTORS f Introduction M IN IC O N of sm all, re c ­ so ld erin g , crim ping, and w ire w rap p in g along with v a ­ tangular, m u lti-co n tact co n n ecto rs w hich H IR O S E has 1300 se ries rious ac es so ries are av a ila b le for a w id e rang e of a p ­


    OCR Scan     		PDF CL213-0738-8 1308-SBA CL213-0739-0 1312-SBA CL213-0740-0 1316-SBA CL213-0741-2 1320-SBA CL213-0742-5 1324-SBA P-1345B-CTA S-1308-SB09 P-1328-CTA S-1324-STA P-1360WE P-1334B-ST P-1324-CTA P-1334-CTA S-1324-CTA P-1360B-SB

    TCS 1002

    Abstract: ZTTCV
    Text: FRO N TER ELECTRO NICS CO.LTD. M ^ tâ & 4L -f f t FR. 4S *¡ m CERAM IC RESONATOR ZTACC/CS/CVDMG/MT/MX ZTTCC/CS/CVJMG/MT/MX S eries o f C cra m ic R e so n u to rfC h ip Type DIMENSIONS Unit:mm) ss 2.00-50.0MHz iz&Q'p ( ZTT Series ) £ / <?/ ZTACC ZTTCC


    OCR Scan     		PDF 755-8J459818 TCS 1002 ZTTCV