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    RU1J002YN Price and Stock

    ROHM Semiconductor RU1J002YNTCL

    MOSFET N-CH 50V 200MA UMT3F
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    RU1J002YNTCL 3,000 1,389
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    RU1J002YNTCL Reel 3,000
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    Bristol Electronics RU1J002YNTCL 8,600
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    Quest Components RU1J002YNTCL 4,480
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    RU1J002YNTCL 48
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    TTI RU1J002YNTCL Reel 27,000 3,000
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    TME RU1J002YNTCL 909 1
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    Avnet Asia RU1J002YNTCL 24 Weeks 3,000
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    CoreStaff Co Ltd RU1J002YNTCL 380
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    Win Source Electronics RU1J002YNTCL 48,000
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    RU1J002YN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RU1J002YNTCL Rohm Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 50V 0.2A UMT3F Original PDF

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    RU1J002YN

    Abstract: No abstract text available
    Text: RU1J002YN Datasheet Nch 50V 200mA Small Signal MOSFET lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures UMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original
    PDF RU1J002YN 200mA 150mW R1120A RU1J002YN

    Untitled

    Abstract: No abstract text available
    Text: RU1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures UMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original
    PDF RU1J002YN 200mA 200mA 150mW R1120A

    Untitled

    Abstract: No abstract text available
    Text: RU1J002YN Nch 50V 200mA Small Signal MOSFET Datasheet lOutline VDSS 50V RDS on (Max.) 2.2W ID 200mA PD 150mW lFeatures UMT3F (3) (1) (2) lInner circuit 1) Low voltage drive(0.9V) makes this (1) Gate (2) Source (3) Drain device ideal for partable equipment.


    Original
    PDF RU1J002YN 200mA 200mA 150mW R1120A