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    Renesas Electronics Corporation RQA0009SXAQS#H1

    MOSFET N-CH 16V 3.2A UPAK
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    DigiKey RQA0009SXAQS#H1 Reel
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    Renesas Electronics Corporation RQA0009SXAQS

    Silicon N-Channel MOS FET
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    Win Source Electronics RQA0009SXAQS 27,980
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    RQA0009SXAQS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RQA0009SXAQS Renesas Technology Silicon N-Channel MOS FET Original PDF

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    RQA0009SXAQS

    Abstract: RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13
    Text: RQA0009SXAQS Silicon N-Channel MOS FET REJ03G1566-0100 Rev.1.00 Jul 04, 2007 Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% VDS = 6 V, f = 520 MHz • Compact package capable of surface mounting


    Original     		PDF RQA0009SXAQS REJ03G1566-0100 PLZZ0004CA-A RQA0009SXAQS RQA0009 RQA0009SXTL-E RQA0009SX c5 marking code 1747 C13

    17-33 0952

    Abstract: RQA0009 RQA0009SXTL-E R07DS0493EJ0200
    Text: Preliminary Datasheet RQA0009SXAQS R07DS0493EJ0200 Previous: REJ03G1566-0100 Rev.2.00 Jun 28, 2011 Silicon N-Channel MOS FET Features • High Output Power, High Gain, High Efficiency Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65% (VDS = 6 V, f = 520 MHz)


    Original     		PDF RQA0009SXAQS R07DS0493EJ0200 REJ03G1566-0100) PLZZ0004CA-A 17-33 0952 RQA0009 RQA0009SXTL-E R07DS0493EJ0200

    RQA0009

    Abstract: RQA0009SXTL-E RQA0009SXAQS
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF