Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE RN2607RN2609 SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E C IRC U IT A N D Unit in mm D RIV ER C IRC U IT APPLICA TIO N S. Including Two Devices in SM6 Super Mini Type with 6 leads With Built-in Bias Resistors Simplify Circuit Design
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OCR Scan
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RN2607RN2609
RN1607
RN1609
RN2607
RN2608
RN2609
2607RN2609
RN2607-RN2609
RN2607
RN2608
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PDF
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Marking HEB
Abstract: RN2607 RN2608 RN2609
Text: TOSHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. + 0.2 2 .8 -0 .3 + 0.2 1.6-0.1 Including Two Devices in SM6 (Super Mini Type with 6 leads)
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OCR Scan
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RN2607-RN2609
RN2607,
RN2608,
RN2609
RN1607-RN1609
RN2607
RN2608
RN2609
RN2608
Marking HEB
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN2607-RN2609 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2607, RN2608, RN2609 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. Including Two Devices in SM6 (Super Mini Type with 6 leads)
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OCR Scan
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RN2607-RN2609
RN2607,
RN2608,
RN2609
RN1607
RN1609
RN2607
RN2608
2607-R
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PDF
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