Untitled
Abstract: No abstract text available
Text: RN1967CT~RN1969CT 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967CT,RN1968CT,RN1969CT ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN1967CT
RN1969CT
RN1968CT
RN2967CT
RN2969CT
RN1968CT
RN1967CT
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RN1967FE
Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
Text: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1967FE
RN1969FE
RN1968FE
RN2967FE
RN2969FE
RN1968FE
RN1967FE
RN1969FE
RN2969FE
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RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
Text: RN1967~RN1969 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967,RN1968,RN1969 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN1967RN1969
RN1967
RN1968
RN1969
RN2967RN2969
RN1967
RN1968
RN1969
RN2967
RN2969
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Untitled
Abstract: No abstract text available
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
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K 192 A transistor
Abstract: RN1967FE RN1968FE RN1969FE RN2967FE RN2969FE
Text: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE, RN1968FE, RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1967FE
RN1969FE
RN1967FE,
RN1968FE,
RN2967FE
RN2969FE
RN1968FE
RN1967FE
K 192 A transistor
RN1968FE
RN1969FE
RN2969FE
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Untitled
Abstract: No abstract text available
Text: RN1967FE~RN1969FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FE,RN1968FE,RN1969FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1967FE
RN1969FE
RN1968FE
RN2967FE
RN2969FE
RN1968FE
RN1969FE
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Untitled
Abstract: No abstract text available
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads) z With built-in bias resistors
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1969
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Untitled
Abstract: No abstract text available
Text: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)
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RN1967FS
RN1969FS
RN1968FS
RN2967FS
RN2969FS
RN19esented
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Untitled
Abstract: No abstract text available
Text: RN1967FS~RN1969FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1967FS,RN1968FS,RN1969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Two devices are incorporated into a fine pitch Small Mold (6 pin)
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RN1967FS
RN1969FS
RN1968FS
RN1968FS
RN1967FS
RN2967FS
RN2969FS
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RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
Text: RN1967~RN1969 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967,RN1968,RN1969 ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN1967RN1969
RN1967
RN1968
RN1969
RN2967RN2969
RN1967
RN1968
RN1969
RN2967
RN2969
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RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
RN1969
RN2969
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Untitled
Abstract: No abstract text available
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967, RN1968, RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads)
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RN1967
RN1969
RN1967,
RN1968,
RN2967
RN2969
RN1967
RN1968
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RN1967
Abstract: RN1968 RN1969 RN2967 RN2969
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications z Including two devices in US6 (ultra super mini type 6 leads)
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
RN1969
RN2969
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RN1968FE
Abstract: RN1969FE RN2967FE RN2969FE RN1967FE
Text: RN1967FE~RN1969FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967FE, RN1968FE, RN1969FE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN1967FE
RN1969FE
RN1967FE,
RN1968FE,
RN2967FE
RN2969FE
RN1968FE
RN1967FE
RN1968FE
RN1969FE
RN2969FE
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RN2969
Abstract: RN1967 RN1968 RN1969 RN2967
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
RN2969
RN1969
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Untitled
Abstract: No abstract text available
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type 6 leads)
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
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RN1967FE
Abstract: RN1968FE RN1969FE RN2967FE RN2969FE
Text: RN1967FE~RN1969FE 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1967FE, RN1968FE, RN1969FE ○ スイッチング用 ○ インバータ回路用 ○ インタフェース回路用 ○ ドライバ回路用
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RN1967FE
RN1969FE
RN1967FE,
RN1968FE,
RN2967FE
RN2969FE
RN1968FE
RN1967FE
RN1968FE
RN1969FE
RN2969FE
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Untitled
Abstract: No abstract text available
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967, RN1968, RN1969 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra-super-mini-type with six (6) leads)
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RN1967
RN1969
RN1967,
RN1968,
RN2967
RN2969
RN1967
RN1968
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RN1967FS
Abstract: RN1969FS RN2967FS RN2968FS RN2969FS
Text: RN2967FS~RN2969FS TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN2967FS,RN2968FS,RN2969FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Complementary to RN1967FS~RN1969FS
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RN2967FS
RN2969FS
RN2968FS
RN2967FS
RN2968FS
RN1967FS
RN1969FS
RN1969FS
RN2969FS
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RN1967
Abstract: RN1968 RN1969 RN2967 RN2969 1969
Text: RN1967~RN1969 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1967,RN1968,RN1969 Unit:mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l Including two devices in US6 (ultra super mini type 6 leads) l With built-in bias resistors
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RN1967
RN1969
RN1968
RN2967
RN2969
RN1967
RN1968
RN1969
RN2969
1969
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Untitled
Abstract: No abstract text available
Text: SILIC O N N PN EP IT A X IA L T Y P E RN1967RN1969 Unit in mm SW ITC H IN G , INV ERTER CIRCUIT, IN TERFAC E CIRCUIT 2 1 ± 0.1 A N D D R IV E R C IRCU IT A PPLICA TIO N S. 1 .2 5 * 0 .1 Including Two Devices in US6 Ultra Super Mini Type 6 leads With Built-in Bias Resistors
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RN1967RN1969
RN2967
RN2969
RN1967
RN1968
RN1969
RN1967-RN1969
RN1968
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1967, RN1968, RN 1969 U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT . ± 2 1 0.1 A N D DRIVER CIRCUIT APPLICATIONS. 1.25±0.1 1 Including Two Devices in US6 (Ultra Super Mini Type 6 leads)
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RN1967-RN1969
RN1967,
RN1968,
RN1967
RN1968
RN1969
RN1967-RN
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kn266
Abstract: 1969
Text: R N 1 9 6 7 , 1 9 6 8 ,1 9 6 9 RN1967 Unit in mm 2.1±0.1 SW ITCH IN G , INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCU IT APPLICATIONS. • • • • • 1.25*0.1 -16 to Including Two Devices in US6 (Ultra Super Mini Type 6 leads) With Built-in Bias Resistors
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OCR Scan
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RN1967)
RN2967
RN2969
RN1967
RN1968
RN1969
kn266
1969
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C-2-BL-C
Abstract: No abstract text available
Text: TOSHIBA RN1967-RN1969 TO SHIBA TRANSISTOR RN1QR7 • « ■ v ■ Mr m g SILICON NPN EPITAXIAL TYPE PCT PROCESS RM1QK8 u « ■ m m mm RM1QRQ g ■ « ■ v ■ «r U nit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT 2 .1 ± 0.1 A N D DRIVER CIRCUIT APPLICATIONS.
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RN1967-RN1969
RN2967--
RN2969
RN1967
RN196S
RN1969
RN1968
C-2-BL-C
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