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    RJP60V0DPM Result Highlights (2)

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    RJP60V0DPM-80#T2 Renesas Electronics Corporation IGBT for Inverter Applications, TO-3PF, /Tube Visit Renesas Electronics Corporation
    RJP60V0DPM-00#T1 Renesas Electronics Corporation IGBT for Inverter Applications, TO-3PFM, /Tube Visit Renesas Electronics Corporation
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    Renesas Electronics Corporation RJP60V0DPM-00#T1

    IGBT TRENCH 600V 45A TO3PFM
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    DigiKey RJP60V0DPM-00#T1 Tube 8 1
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    Renesas Electronics America RJP60V0DPM-00#T1 Tube 8 1
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    RJP60V0DPM Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RJP60V0DPM-00#T1 Renesas Electronics IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 45A 40W TO-3PFM Original PDF

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    RJP60V0DPM

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A RJP60V0DPM

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0100 Rev.1.00 Mar 01, 2013 Features • High breakdown-voltage  Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM-80 R07DS1036EJ0100 PRSS0003ZD-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM 600V - 22A - IGBT Application: Inverter R07DS0669EJ0100 Rev.1.00 Feb 07, 2012 Features • High breakdown-voltage  Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0100 PRSS0003ZA-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM R07DS0669EJ0200 Rev.2.00 Apr 02, 2014 600V - 22A - IGBT Application: Inverter Features • High breakdown-voltage • Low Collector to Emitter saturation Voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM R07DS0669EJ0200 PRSS0003ZA-A therma2886-9022/9044

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Features • High breakdown-voltage • Low collector to emitter saturation voltage VCE sat = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C)


    Original     		PDF RJP60V0DPM-80 R07DS1036EJ0200 PRSS0003ZD-A th2886-9022/9044