RJL5018DPK Search Results

RJL5018DPK Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJL5018DPK-00#T0		Renesas Electronics Corporation	Nch Single Power Mosfet 500V 35A 170Mohm To-3P

RJL5018DPK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJL5018DPK-00#T0		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 35A TO3P		Original	PDF

RJL5018DPK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.14  typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C)	Original	RJL5018DPK R07DS0498EJ0200 REJ03G1817-0100) PRSS0004ZE-A	PDF
Untitled Abstract: No abstract text available Text: RJL5018DPK Silicon N Channel MOS FET High Speed Power Switching REJ03G1817-0100 Rev.1.00 Sep 11, 2009 Features • • • • Built-in fast recovery diode Low on-resistance Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A	Original	RJL5018DPK REJ03G1817-0100 PRSS0004ZE-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJL5018DPK R07DS0498EJ0200 Previous: REJ03G1817-0100 Rev.2.00 Jun 21, 2012 500V - 35A - MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.14  typ. (at ID = 17.5 A, VGS = 10 V, Ta = 25C)	Original	RJL5018DPK R07DS0498EJ0200 REJ03G1817-0100) PRSS0004ZE-A	PDF
PRSS0004ZE-A Abstract: RJL5018DPK-00-T0 SC-65 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF