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    RFD8P06ESM9A Price and Stock

    Intersil Corporation RFD8P06ESM9A

    MOSFET Transistor, P-Channel, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD8P06ESM9A 1,087
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $1.125
    • 10000 $1.125
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    Harris Semiconductor RFD8P06ESM9A

    MOSFET Transistor, P-Channel, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components RFD8P06ESM9A 764
    • 1 $3
    • 10 $3
    • 100 $3
    • 1000 $1.2375
    • 10000 $1.2375
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    RFD8P06ESM9A 413
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.9375
    • 10000 $0.9375
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    Renesas Electronics Corporation RFD8P06ESM9A

    (Alt: RFD8P06ESM9A)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica RFD8P06ESM9A 14 Weeks 1
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    RFD8P06ESM9A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFD8P06ESM9A Fairchild Semiconductor 8A, 60V, 0.300 Ohm, P-Channel Power MOSFET Original PDF
    RFD8P06ESM9A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    RFD8P06ESM9A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8A60V

    Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 8A60V RFD8P06E RFD8P06ESM9A TB334 bv254

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E IS415 BV202 D8P06
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 8A, 60V SOURCE • rDS ON = 0.300Ω DRAIN GATE • Temperature Compensating PSPICE Model


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E O-220AB O-251AA RFD8P06ESM RFP8P06E 49e-10 1e-30 RFD8P06E RFD8P06ESM9A IS415 BV202 D8P06

    RFD8P06E

    Abstract: RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet July 1999 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs File Number 3937.5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E RFD8P06E RFD8P06ESM9A TB334

    Untitled

    Abstract: No abstract text available
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet Title FD8 6E, D8 6ES P8P E bt A, V, 00 m, 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E 175oC TB334

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S RFD8P06E, RFD8P06ESM, RFP8P06E 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs September 1998 Features Description • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives opti­


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E 0-300i2 49e-10 1e-30 48e-4 42e-7) 40e-3

    8A60V

    Abstract: rfp8p06e
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E integri I D a ta S h e e t J u ly 1 9 9 9 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs F ile N u m b e r 3 9 3 7 .5 Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E AN7254 8A60V

    FP8P06E

    Abstract: 9l2i sclm PSPICE PLIC
    Text: RFD8P06E, RFD8P06ESM, RFP8P06E fin H A R R IS U U S E M I C O N D U C T O R 8A, 60V, ESD Rated, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JE D E C T 0 -2 2 0 A B • BA, 6 0 V • SOURCE^. r DS ON = 0.3 0 0 U


    OCR Scan     		PDF RFD8P06E, RFD8P06ESM, RFP8P06E RFD8P06ESM RFP8P06E 1e-30 48e-4 42e-7) 40e-3 FP8P06E 9l2i sclm PSPICE PLIC