808D
Abstract: RBV800D RBV810D UL94Vo
Text: RBV800D - RBV810D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 8.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV800D
RBV810D
RBV25
UL94V-O
MIL-STD-202,
808D
RBV810D
UL94Vo
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV800D - RBV810D SILICON BRIDGE RECTIFIERS
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Original
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PDF
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RBV800D
RBV810D
RBV25
UL94V-O
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808D
Abstract: RBV800D RBV810D
Text: RBV800D - RBV810D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 8.0 Amperes 3.9 ± 0.2 C3 30 ± 0.3 FEATURES : ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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Original
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PDF
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RBV800D
RBV810D
RBV25
UL94V-O
MIL-STD-202,
808D
RBV810D
|
808D
Abstract: RBV800D RBV810D
Text: RBV800D - RBV810D SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts Io : 8.0 Amperes RBV25 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅3.2 ± 0.1 ~ ∼ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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Original
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PDF
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RBV800D
RBV810D
RBV25
UL94V-O
MIL-STD-202,
808D
RBV810D
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808D
Abstract: 801d RBV800D RBV810D
Text: 5YM5EMI SEMICONDUCTOR RBV800D - RBV810D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 8.0 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength o f 2000 V dc
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OCR Scan
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PDF
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RBV800D
RBV810D
UL94V-0
MIL-STD-202,
808D
801d
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