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    RBV410 Search Results

    RBV410 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RBV410 EIC Semiconductor Silicon Bridge Rectifiers Original PDF
    RBV-4102 Allegro MicroSystems DIODE RECTIFIER BRIDGE SINGLE 200V 10A 4RBV Original PDF
    RBV-4102 Sanken Electric DIODE RECTIFIER BRIDGE SINGLE 200V 10A Original PDF
    RBV-4102 Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RBV-4102 Sanken Electric 200V 10A Bridge Diode Original PDF
    RBV-4106M Sanken Electric Silicon Diodes / Silicon Varistors Original PDF
    RBV-4106M Sanken Electric Rectifier Diodes Original PDF

    RBV410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RBV-404 bridge rectifier

    Abstract: RBV4005 RBV410 RBV-406
    Text: BL GALAXY ELECTRICAL RBV4005 - - - RBV410 VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A SILICON BRIDGE RECTIFIERS KBJ4 FEATURES Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique Surge overload rating: 80 amperes peak


    Original     		PDF RBV4005 RBV410 RBV-404 bridge rectifier RBV410 RBV-406

    RBV408

    Abstract: RBV-406
    Text: RBV4005-RBV410 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 4.0 A KBJ4 Features 4.7± 0.2 Ideal for printed circuit board 25± 0.3 φ 3.2± 9.5± 0.2 15± 0.3 plastic technique 0.15 4.6± 0.15 3.7± 0.2 Reliable low cost construction utilizing molded


    Original     		PDF RBV4005-RBV410 RBV408 RBV-406

    RBV-4102

    Abstract: No abstract text available
    Text: 200V 10A Bridge Diode RBV-4102 •Absolute maximum ratings Ratings Unit VRSM 250 VRM 200 IF AV 10 ■Electrical characteristics Parameter Ratings V VF 1.1max V V IR 10max µA Tj=25°C, VR=VRM, per element A H.IR 100max µA Tj=150°C, VR=VRM, per element Rth( j-c)


    Original     		PDF RBV-4102 10max 100max UL94V-0 RBV-4102

    AM01Z

    Abstract: RBV402
    Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150


    Original     		PDF

    RBV-606

    Abstract: FMM-26S 606H
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF

    Mark RBV

    Abstract: transistor RBV RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF RBV-606H Mark RBV transistor RBV RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M

    AM01Z

    Abstract: EM01Z FMM-22S FMM-32S RBV-402 RBV-406H RBV-4102 RBV-602 SFPM-52 SFPM-62
    Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150


    Original     		PDF RBV-606H AM01Z EM01Z FMM-22S FMM-32S RBV-402 RBV-406H RBV-4102 RBV-602 SFPM-52 SFPM-62

    2SC5586 equivalent

    Abstract: 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent
    Text: CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. • Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements


    Original     		PDF TM1641S-L TM1661B-L TM1661P-L TM1661S-L TM2541B-L TM2561B-L TM341M-L TM341S-L TM341S-R TM361M-L 2SC5586 equivalent 2sc5586 2sa1694 equivalent 2SC5487 transistor 2SC5586 STR83159 em 234 stepper SE090 SK 5154S 2SK3460 equivalent

    em 234 stepper

    Abstract: 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090
    Text: Bulletin No O01ED0 Jun.,2001 SEMICONDUCTORS SHORT FORM CATALOG ICs TRANSISTORS THYRISTORS DIODES LIGHT EMITTING DIODES CAUTION / WARNING • The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility


    Original     		PDF O01ED0 H1-O01ED0-0106030ND em 234 stepper 2SC5586 equivalent 8002 1018 AUDIO amplifier 2SC5586 2SC5487 voltage doubler bridge varistor 560-2 2sa2003 se125n SE090

    ATS 2501

    Abstract: RM3C RBV-602 AM01Z EM01Z FMM-22S FMM-32S RBV-402 RBV-4102 SFPM-52
    Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150


    Original     		PDF

    RN4Z

    Abstract: No abstract text available
    Text: Characteristic Curves Rectifier Diodes SFPM-5 series 0.6 0.4 0.1 Ta = 150°C 100°C 60°C 25°C 0.01 t 1.6 P.C.B. Solder Land = 3.0 35µmCu 25 50 75 100 125 Ambient Temperature Ta °C 150 0.001 0.3 0.5 0.7 0.9 1.1 1.3 Forward Voltage VF (V) 30 25 20ms 20


    Original     		PDF

    ATS 2506

    Abstract: RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4086H
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF

    rvb 602

    Abstract: RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S
    Text: 4-1 Rectifier Diodes 4-1-2 2 Chip Part No. FMM-31S, R FMM-22S, R 4-1-3 VRM IF IFSM V (A) (A) 100 20 120 FM80 2 RBV-401 10 100 TO-220F 1 RBV-601 20 120 FM80 2 RBV-402 10 100 TO-220F 1 RBV-602 20 120 FM80 2 RBV-4102 10 100 TO-220F 1 RBV-404 20 120 FM80 2 RBV-604


    Original     		PDF FMM-31S, FMM-22S, FMM-32S, FMM-24S, FMM-34S, FMM-26S, FMM-36S, O-220F rvb 602 RBV-602 FMM26S FMM-26S FMM36S FMM-36S FMM22S rvb 406m RBV-406M FMM34S

    rm3c diode

    Abstract: No abstract text available
    Text: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)


    Original     		PDF

    SK 18752

    Abstract: 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651
    Text: SANKEN 半导体 CONTENTS 目 录 1 集成电路 1-1 1-2 2 1-1-2 开关式稳压集成电路 . 41 1-1-3 多路输出型稳压集成电路 . 93


    Original     		PDF TF320M TF341M TF320M-A TF321M-A TF321M TF325P TF341S TF521M TF521S SK 18752 2SC5586 SK 18751 sla6101 sk c4467 STR20012 SLA6102 sk A1186 SK C5071 fn651

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586

    RBV-1506

    Abstract: RBV-1506J Mark RBV AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF RBV-1506 RBV-1506 RBV-1506J Mark RBV AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F

    diode RBV-406M

    Abstract: No abstract text available
    Text: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)


    Original     		PDF

    RBV-402

    Abstract: RO2Z FMM-22S RBV-602 AM01Z EM01Z FMM-32S RBV-4102 SFPM-52 SFPM-62
    Text: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Ta (°C) 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150 0.97


    Original     		PDF SFPM-52 EM01Z RBV-402 RO2Z FMM-22S RBV-602 AM01Z EM01Z FMM-32S RBV-4102 SFPM-52 SFPM-62

    RBV-4086H

    Abstract: RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4106M
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF RBV-4086H RBV-4086H RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4106M

    Untitled

    Abstract: No abstract text available
    Text: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)


    Original     		PDF RBV-1506

    RBV-401

    Abstract: RBV-406 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406H RBV-406M RBV-4086H
    Text: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50


    Original     		PDF RBV-406M RBV-401 RBV-406 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406H RBV-406M RBV-4086H

    ATS 2501

    Abstract: zener diode reference guide sanken UX-F5B MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FML-32S-T B 2306 BARRIER RECTIFIER fmgg2c diode RBV-406M FMUG2F RU3C
    Text: Bulletin No. D01EE0 Sep., 2002 SILICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in


    Original     		PDF D01EE0 H1-D01EE0-0209020TA ATS 2501 zener diode reference guide sanken UX-F5B MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR FML-32S-T B 2306 BARRIER RECTIFIER fmgg2c diode RBV-406M FMUG2F RU3C