RBV1000
Abstract: RBV1010
Text: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV1000
RBV1010
RBV25
UL94V-O
MIL-STD-202,
RBV1010
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1004D
Abstract: 1002d 1001d 1006D RBV1000D RBV1010D
Text: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ + 1.0 ± 0.1 17.5 ± 0.5 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV1000D
RBV1010D
RBV25
UL94V-O
MIL-STD-202,
1004D
1002d
1001d
1006D
RBV1010D
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS
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RBV1000D
RBV1010D
RBV25
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Untitled
Abstract: No abstract text available
Text: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC
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RBV1000
RBV1010
RBV25
UL94V-O
MIL-STD-202,
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1002D
Abstract: 1004D 1006D RBV1000D RBV1010D
Text: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV1000D
RBV1010D
RBV25
UL94V-O
MIL-STD-202,
1002D
1004D
1006D
RBV1010D
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1004D
Abstract: 1002D 1006D RBV1000D RBV1010D diode 1006D
Text: RBV1000D - RBV1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 ∅ 3.2 ± 0.1 FEATURES : ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV1000D
RBV1010D
RBV25
UL94V-O
MIL-STD-202,
1004D
1002D
1006D
RBV1010D
diode 1006D
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RBV10
Abstract: transistor RBV RBV1000 RBV1010
Text: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : High current capability High surge current capability High reliability Low reverse current Low forward voltage drop High case dielectric strength of 2000 VDC
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RBV1000
RBV1010
RBV25
UL94V-O
MIL-STD-202,
RBV10
transistor RBV
RBV1010
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Untitled
Abstract: No abstract text available
Text: RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 30 ± 0.3 C3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 17.5 ± 0.5 + 11 ± 0.2 20 ± 0.3 High current capability High surge current capability High reliability
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RBV1000
RBV1010
RBV25
UL94V-O
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS
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RBV1000
RBV1010
RBV25
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1002D
Abstract: 1004D RBV1000D RBV1010D
Text: Certificate TH97/10561QM RBV1000D - RBV1010D Certificate TW00/17276EM SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts Io : 10 Amperes 3.9 ± 0.2 C3 30 ± 0.3 4.9 ± 0.2 FEATURES : ∅ 3.2 ± 0.1 ~ ~ 1.0 ± 0.1 MECHANICAL DATA : 10 7.5 7.5 ±0.2 ±0.2 ±0.2
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TH97/10561QM
RBV1000D
RBV1010D
TW00/17276EM
RBV25
UL94V-O
MIL-STD-202,
1002D
1004D
RBV1010D
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Untitled
Abstract: No abstract text available
Text: RBV10005-RBV1010 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 - 1000 V CURRENT: 10 A KBJ Features Rating to 1000V PRV 4.7± 0.25 30± 0.3 3.7± 0.2 Surge overload rating to 300 Am peres peak Reliable low cos t cons truction utilizing m olded plas tic technique res ults in inexpens ive product
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RBV10005-RBV1010
MIL-STD-202
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diode 1006D
Abstract: 1002D JEC 400 1006D RBV1000D 1001d
Text: 5YMSEMI SEMICONDUCTOR RBV1000D - R B V 1010D SILICON BRIDGE RECTIFIERS RBV25 PRV : 5 0 - 1000 Volts lo : 10 Amperes FEATURES: * * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
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OCR Scan
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RBV1000D
RBV101
UL94V-0
MIL-STD-202,
diode 1006D
1002D
JEC 400
1006D
1001d
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RBV1000
Abstract: RBV1010 1001RBV
Text: 5YNSEMI SEMICONDUCTOR RBV1000 - RBV1010 SILICON BRIDGE RECTIFIERS RBV25 PRV : 50 - 1000 Volts lo : 10 Amperes 3.9 ± 0.2C3 , 30 ± 0.3 4.9 ± 0.2 - P= K-H FE A TU R E S : * * * * * * * * 0 3.2 ± 0.1 High current capability High surge current capability
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OCR Scan
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RBV1000
RBV1010
UL94V-0
MIL-STD-202,
1001RBV
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