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Catalog Datasheet	MFG & Type	PDF	Document Tags
NE3521M04 Abstract: marking V86 Text: Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz Reference Value	Original	PDF	NE3521M04 R09DS0058EJ0100 NE3521M04-T2 NE3521M04-T2-A NE3521M04 marking V86

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NE3521M04

Abstract: marking V86
Text: Data Sheet NE3521M04 N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain R09DS0058EJ0100 Rev.1.00 Mar 19, 2013 FEATURES • Low noise figure and high associated gain: NF = 0.85 dB TYP., Ga = 11 dB TYP. @ VDS = 2 V, ID = 10 mA, f = 20 GHz NF = 0.9 dB TYP., Ga = 10.5 dB TYP. @VDS = 2 V, ID = 6mA, f = 20 GHz Reference Value

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NE3521M04 R09DS0058EJ0100 NE3521M04-T2 NE3521M04-T2-A NE3521M04 marking V86