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    Text: Preliminary Datasheet RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching R07DS1121EJ0100 Rev.1.00 Sep 20, 2013 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current


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    PDF RJL5013DPP-E0 R07DS1121EJ0100 PRSS0003AG-A O-220FP)