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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0789EJ0100 Power Switching Rev.1.00 Feb 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03N8DNS R07DS0789EJ0100 PWSN0008JB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RJK03N8DNS Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0789EJ0100 Power Switching Rev.1.00 Feb 29, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting


    Original     		PDF RJK03N8DNS R07DS0789EJ0100 PWSN0008JB-A