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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100 Rev.1.00 Apr 17, 2012 MOS FIELD EFFECT TRANSISTOR Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 47 m MAX. (VGS = –10 V, ID = –10 A)


    Original     		NP20P06YLG R07DS0706EJ0100 NP20P06YLG AEC-Q101 NP20P06YLG-E1-AY NP20P06YLG-E2-AY PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP20P06YLG R07DS0706EJ0100 Rev.1.00 Apr 17, 2012 MOS FIELD EFFECT TRANSISTOR Description The NP20P06YLG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 47 m MAX. (VGS = –10 V, ID = –10 A)


    Original     		NP20P06YLG R07DS0706EJ0100 NP20P06YLG AEC-Q101 NP20P06YLG-E1-AY NP20P06YLG-E2-AY PDF