Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0422EJ0100 Rev.1.00 May 26, 2011 Features • Low on-resistance RDS on = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
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Original
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PDF
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RJK5026DPP-M0
R07DS0422EJ0100
PRSS0003AF-A
O-220FL)
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5026DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0422EJ0100 Rev.1.00 May 26, 2011 Features • Low on-resistance RDS on = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current • High speed switching
|
Original
|
PDF
|
RJK5026DPP-M0
R07DS0422EJ0100
PRSS0003AF-A
O-220FL)
|