Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current
|
Original
|
PDF
|
RJK5026DPP
R07DS0360EJ0200
REJ03G1734-0100)
PRSS0003AB-A
O-220FN)
|
Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RJK5026DPP R07DS0360EJ0200 Previous: REJ03G1734-0100 Rev.2.00 Apr 15, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 1.35 Ω typ. (at ID = 3 A, VGS = 10 V, Ta = 25°C) • Low leakage current
|
Original
|
PDF
|
RJK5026DPP
R07DS0360EJ0200
REJ03G1734-0100)
PRSS0003AB-A
O-220FN)
|