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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 Previous: REJ03G1496-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching


    Original     		PDF RQK0604IGDQA R07DS0308EJ0200 REJ03G1496-0100) PLSP0003ZB-A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet RQK0604IGDQA R07DS0308EJ0200 Previous: REJ03G1496-0100 Rev.2.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching


    Original     		PDF RQK0604IGDQA R07DS0308EJ0200 REJ03G1496-0100) PLSP0003ZB-A