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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


    Original     		PDF BB502C R07DS0283EJ0700 REJ03G0832-0600) 200pF, OT-343mod) PTSP0004ZA-A BB502C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet BB502C R07DS0283EJ0700 Previous: REJ03G0832-0600 Rev.7.00 Mar 28, 2011 Built in Biasing Circuit MOS FET IC UHF RF Amplifier Features • • • • Built in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz


    Original     		PDF BB502C R07DS0283EJ0700 REJ03G0832-0600) 200pF, OT-343mod) PTSP0004ZA-A BB502C