Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 m MAX. (VGS =10 V, ID = 15 A)
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Original
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N0600N
R07DS0220EJ0100
N0600N
N0600N-S17-AY
50p/tube
O-220
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PDF
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N0600N-S17
Abstract: N0600N-S17-AY N0600N N0600
Text: Preliminary Data Sheet N0600N R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 MOS FIELD EFFECT TRANSISTOR Description The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on 1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A)
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Original
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N0600N
R07DS0220EJ0100
N0600N
N0600N-S17-AY
50p/tube
O-220
Voltage9044
N0600N-S17
N0600
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PDF
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