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Catalog Datasheet	MFG & Type	PDF	Document Tags
RQA0011 Abstract: No abstract text available Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0400 Rev.4.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)	Original	PDF	RQA0011DNS WSON0504-2: R07DS0095EJ0400 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011

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RQA0011

Abstract: No abstract text available
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0400 Rev.4.00 Jun 30, 2011 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +39.6 dBm, Linear gain = 20 dB, PAE = 68% f = 520 MHz  Small outline package (WSON0504-2: 5.0  4.0  0.8 mm)

Original

PDF

RQA0011DNS WSON0504-2: R07DS0095EJ0400 PWSN0002ZA-B WSON0504-2> RQA0011" RQA0011