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    Text: Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 Previous: REJ03G1913-0100 Rev.2.00 Jul 22, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK5030DPD R07DS0050EJ0200 REJ03G1913-0100) PRSS0004ZG-A PDF

    RJK5030DPD

    Abstract: PRSS0004ZG-A
    Text: Preliminary Datasheet RJK5030DPD R07DS0050EJ0200 Previous: REJ03G1913-0100 Rev.2.00 Jul 22, 2010 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-state resistance RDS(on) = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching


    Original     		RJK5030DPD R07DS0050EJ0200 REJ03G1913-0100) PRSS0004ZG-A ch9044 RJK5030DPD PRSS0004ZG-A PDF