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    Abstract: No abstract text available
    Text: Preliminary Data Sheet NP23N06YDG R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)


    Original     		NP23N06YDG R07DS0014EJ0100 NP23N06YDG AEC-Q101 PDF

    NP23N06

    Abstract: NP23N06YDG
    Text: Preliminary Data Sheet NP23N06YDG R07DS0014EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP23N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 27 mΩ MAX. (VGS = 10 V, ID = 11.5 A)


    Original     		NP23N06YDG R07DS0014EJ0100 NP23N06YDG AEC-Q101 NP23N06 PDF