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Catalog Datasheet	MFG & Type	PDF	Document Tags
PA1932TE Abstract: SC-95 Text: Preliminary Data Sheet PA1932TE R07DS0001EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA1932TE is a switching device, which can be driven directly by a 4.5 V power source. The μ PA1932TE features a low on-state resistance and excellent switching characteristics, and is suitable for	Original	PDF	PA1932TE R07DS0001EJ0100 PA1932TE SC-95

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PA1932TE

Abstract: SC-95
Text: Preliminary Data Sheet PA1932TE R07DS0001EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The μ PA1932TE is a switching device, which can be driven directly by a 4.5 V power source. The μ PA1932TE features a low on-state resistance and excellent switching characteristics, and is suitable for

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PA1932TE R07DS0001EJ0100 PA1932TE SC-95