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    HMF06300

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC S HARRIS PRODUCT DATA bOE » • TTbMlME Qailfl37 226 ■ ■ SMGK HMF-06300 Gain Optimized Low Current GaAs FET 2-12 GHz Features * High Transconductance, especially for Feedback Amplifier Designs * Large Cross Section Ti/Pt/Au Gates


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    PDF Qailfl37 HMF-06300 HMF06300