UPD1714G
Abstract: KS1160 DH 7177 lf324 upd1714 EVAKIT-1700 RN3A
Text: ~ NE C ELECTRONICS INC Tfl d F | L4275E5 QQ173SÌ. 3 | T~77'0$-0$ V UPD1714G Internal Prescaler, PLL synthesizer, and LCD driver Microcontroller The UPD1714G is a 4-bit CMOS microcontroller with prescaler t hat can input up to 150 MHz, PL L synthesizer, and 1/2 duty, 1/2
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QQ173S4.
upd1714g
UPD1714G
16-bit
IEM-1095
-27-HPK
KS1160
DH 7177
lf324
upd1714
EVAKIT-1700
RN3A
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LH516AZE
Abstract: No abstract text available
Text: S H A R JP L H5 1 6AZE 1 Contents 1 . Description 2 2. Pin Conf ¡{juration 2 3. Truth Table 2 4. Block Diagram 3 5. Absolute Maximum Ratings 4 6. Recommended DC Operating Conditions 4 7. DC Electrical Characteristics .
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DD173SÃ
LH516AZE
001735e)
LH516AZE
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M37413M6-XXXFP
Abstract: M37413M6H DG17351
Text: niTSUBISHKMICMPTR/MIPRC bl E J> bEM'IÔEÛ D G 17 31 ñ 70T « 1 1 1 1 4 M ITSUBISHI M ICROCOM PUTERS PRELIMINARY M 37 41 3 M 4 H X X X F P M 3 7 4 1 3M 6H X X X F P M 3 7 4 1 3 M 6 H X X X F P ) SIN G LE-C H IP 8-BIT CMOS M ICROCO M PU TER DESCRIPTION T h e M 3 7 4 1 3 M 4 H X X X FP Is a sin g le -c h ip m icro co m p uter d e
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1200/rx,
37413M
80P6S
M37413M6-XXXFP
M37413M6H
DG17351
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62703-F
Abstract: CFY30 GaAs FET cfy 19 siemens gaas fet
Text: fl2 3 b3 2ü BSE D GaAs FET SIEMENS/ 0G1734Ô 2 « S I P SPCLi SEMICONDS CFY30 T " '3 1 • • • • • • • Low noise Fm n = 1.4 dB at 4 GHz) High gain (11.5 dB typ. at 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion-implanted planar structure
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0G1734Ô
CFY30
62703-F
OT-143
fl23b32Q
GG173S7
T--31--25
CFY30
GaAs FET cfy 19
siemens gaas fet
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oki 117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 117400 _ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The M SM 5117400 is a n ew generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.
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304-Word
304-w
MSM5117400
b7E424D
MSM5117400
00173bt.
oki 117400
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