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    QPB705 Search Results

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    QPB704

    Abstract: No abstract text available
    Text: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging


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    OPB703/OPB704/QPB705 7Mbbfl51 QPB704 PDF

    KR8801

    Abstract: OPB703A KR8802 OPB704 OPB703 QPB704 OPB705 QPB705 Optek Technology opb704 KR8800
    Text: @ OPTEK Product Bulletin OPB703 June 1994 Reflective Object Sensors Types QPB703, QPB704, QPB705 .430(10.92 .062(1.59) R NOH .210(5.33} loi | 0| ,385(9,70) .365(9.27) 0PÖ705 .290(7.37) .590(14.99) .Î50(3.01) NOH .025(0.64) DIMENSIONS ARE IN IMCHES(MILLIMCTERS)


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    OPB703 QPB704, QPB705 025CO. CATH00E 0P8705 OPB703, OPB704 OPB705 KR8801 OPB703A KR8802 QPB704 QPB705 Optek Technology opb704 KR8800 PDF

    transistor TIP 328

    Abstract: OPB703 OPB704
    Text: BB REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 DESCRIPTION PACKAGE DIMENSIONS .420 10.67 —I I—.328 (8.33) 062(1.57) R NOM REFLECTIVE SURFACE .150 (3.81) NOM .150(3.81) MIN .300 (7 .6 2 )- FEATURES h.603 (15.32)H .200 (5.08)— T~ □


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    OPB703/OPB704/QPB705 OPB703, OPB704, OPB703/OPB704, transistor TIP 328 OPB703 OPB704 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0 .Q P I E K Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, OPB7Q4, QPB705 Features Absolute Maximum Ratings Ta = 25° C u n le ss otherw ise noted • Phototransistor output • High sensitivity • Low cost plastic housing Storage and Operating Temperature. -40° C to +85° C


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    OPB703 QPB705 PDF

    QPB704

    Abstract: OPB704 OPB703 high sensitivity reflective phototransistor reflective lens phototransistor 2u 85 diode OPB705 QPB705 phototransistor npn high resolution reflective lens phototransistor
    Text: 0 OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, QPB704, QPB705 m Features Absolute Maximum Ratings (Ta = 25° Cunless otherwise noted • • • • Storage and Operating Temperature. -40° C to +85° C


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    OPB703 QPB704, QPB705 OPB704 OPB705 b7c56SfiO QPB704 high sensitivity reflective phototransistor reflective lens phototransistor 2u 85 diode QPB705 phototransistor npn high resolution reflective lens phototransistor PDF

    high resolution reflective lens phototransistor

    Abstract: OPB703 OPB704 Optek Technology opb704 QPB704 high resolution reflective phototransistor OPB705 QPB705 reflective lens phototransistor
    Text: OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, QPB704, QPB705 .430 10.92 0 62 (1.59 ) R NOM .210(5.33) (3 .385(9.78) .365(9.27) I. .150(3.81) N0M DIMENSIONS ARE IN INCHES(M|LLIMETERS) .01 5 (0 .38 ) •c a t h o o e l e a o .


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    OPB703 OPB703, QPB704, QPB705 OPB704 OPB705 Y///////////77777* high resolution reflective lens phototransistor Optek Technology opb704 QPB704 high resolution reflective phototransistor QPB705 reflective lens phototransistor PDF

    QPB703

    Abstract: OPB703 OPB704
    Text: OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types QPB703, OPB7Q4, QPB705 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Phototransistor output Storage and OperatingTemperature. -40° C to +85° C


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    OPB703 QPB703, QPB705 QPB703 OPB704 PDF

    0PB704W

    Abstract: OPB703W QPB704W QPB704 diameter lens phototransistor OPB704W OPB705W QPB705W Scans-0014018
    Text: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703W/OPB704W/OPB7Q5W PACKAGE DIMENSIONS The OPB703W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The


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    OPB703W/OPB704W/OPB7Q5W PB703W QPB704W QPB705W OPB703W, OPB704W, OPB705W OPB703W OPB704W 0PB704W QPB704W QPB704 diameter lens phototransistor QPB705W Scans-0014018 PDF