QPB704
Abstract: No abstract text available
Text: EO REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 .420 10.67 — Th e O P B 703, O P B 704, and O P B 705 consist of an -.3 2 8 (8.33) infrared em itting diode and an NPN silicon .025 (0.64), II phototransistor m ounted side by side on a converging
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OPB703/OPB704/QPB705
7Mbbfl51
QPB704
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KR8801
Abstract: OPB703A KR8802 OPB704 OPB703 QPB704 OPB705 QPB705 Optek Technology opb704 KR8800
Text: @ OPTEK Product Bulletin OPB703 June 1994 Reflective Object Sensors Types QPB703, QPB704, QPB705 .430(10.92 .062(1.59) R NOH .210(5.33} loi | 0| ,385(9,70) .365(9.27) 0PÖ705 .290(7.37) .590(14.99) .Î50(3.01) NOH .025(0.64) DIMENSIONS ARE IN IMCHES(MILLIMCTERS)
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OPB703
QPB704,
QPB705
025CO.
CATH00E
0P8705
OPB703,
OPB704
OPB705
KR8801
OPB703A
KR8802
QPB704
QPB705
Optek Technology opb704
KR8800
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transistor TIP 328
Abstract: OPB703 OPB704
Text: BB REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703/OPB704/QPB705 DESCRIPTION PACKAGE DIMENSIONS .420 10.67 —I I—.328 (8.33) 062(1.57) R NOM REFLECTIVE SURFACE .150 (3.81) NOM .150(3.81) MIN .300 (7 .6 2 )- FEATURES h.603 (15.32)H .200 (5.08)— T~ □
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OPB703/OPB704/QPB705
OPB703,
OPB704,
OPB703/OPB704,
transistor TIP 328
OPB703
OPB704
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Untitled
Abstract: No abstract text available
Text: 0 .Q P I E K Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, OPB7Q4, QPB705 Features Absolute Maximum Ratings Ta = 25° C u n le ss otherw ise noted • Phototransistor output • High sensitivity • Low cost plastic housing Storage and Operating Temperature. -40° C to +85° C
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OPB703
QPB705
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QPB704
Abstract: OPB704 OPB703 high sensitivity reflective phototransistor reflective lens phototransistor 2u 85 diode OPB705 QPB705 phototransistor npn high resolution reflective lens phototransistor
Text: 0 OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, QPB704, QPB705 m Features Absolute Maximum Ratings (Ta = 25° Cunless otherwise noted • • • • Storage and Operating Temperature. -40° C to +85° C
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OPB703
QPB704,
QPB705
OPB704
OPB705
b7c56SfiO
QPB704
high sensitivity reflective phototransistor
reflective lens phototransistor
2u 85 diode
QPB705
phototransistor npn
high resolution reflective lens phototransistor
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high resolution reflective lens phototransistor
Abstract: OPB703 OPB704 Optek Technology opb704 QPB704 high resolution reflective phototransistor OPB705 QPB705 reflective lens phototransistor
Text: OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types OPB7Q3, QPB704, QPB705 .430 10.92 0 62 (1.59 ) R NOM .210(5.33) (3 .385(9.78) .365(9.27) I. .150(3.81) N0M DIMENSIONS ARE IN INCHES(M|LLIMETERS) .01 5 (0 .38 ) •c a t h o o e l e a o .
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OPB703
OPB703,
QPB704,
QPB705
OPB704
OPB705
Y///////////77777*
high resolution reflective lens phototransistor
Optek Technology opb704
QPB704
high resolution reflective phototransistor
QPB705
reflective lens phototransistor
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QPB703
Abstract: OPB703 OPB704
Text: OPTEK Product Bulletin OPB703 June 1996 Reflective Object Sensors Types QPB703, OPB7Q4, QPB705 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Phototransistor output Storage and OperatingTemperature. -40° C to +85° C
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OPB703
QPB703,
QPB705
QPB703
OPB704
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0PB704W
Abstract: OPB703W QPB704W QPB704 diameter lens phototransistor OPB704W OPB705W QPB705W Scans-0014018
Text: REFLECTIVE OBJECT SENSORS OPTOELECTRONICS OPB703W/OPB704W/OPB7Q5W PACKAGE DIMENSIONS The OPB703W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The
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OPB703W/OPB704W/OPB7Q5W
PB703W
QPB704W
QPB705W
OPB703W,
OPB704W,
OPB705W
OPB703W
OPB704W
0PB704W
QPB704W
QPB704
diameter lens phototransistor
QPB705W
Scans-0014018
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