BGY113A
Abstract: BGY113B
Text: N AUER PHILIPS/DISCRETE t.'ÌE » • tbS3*î31 Q03G5Û3 b53 H A P X Philips Components BGY113A/113B Datasheet status Preliminary specification date of issue May 1991 UHF amplifier modules PINNING - SOT288D DESCRIPTION A range of RF power amplifier modules designed for use in
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BGY113A/113B
BGY113A
BGY113B
OT288D.
BGY113B
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is DRAM MODULE MH4M325CXJ-5,-6,-7/ MH4M325CNXJ-5,-6,-7 HYPER PAGE MODE 134217728-BIT (4194304-WQRD BY 32-BIT) DYNAMIC RAM DESCRIPTION The MH4M325CXJ/CNXJ is 4194304-word x 32-bit dynamic RAM. This consists of eight industry standard 4M x 4
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MH4M325CXJ-5
MH4M325CNXJ-5
134217728-BIT
4194304-WQRD
32-BIT)
MH4M325CXJ/CNXJ
4194304-word
32-bit
MH4M325CXJ
MH4M325CNXJ
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ba102
Abstract: IRFP150 TSD4M150F TSD4M150V T-39-15 sc0305
Text: S G ~ S - T H OMS ON 3DE » • 7^51537 DD3DS3Ö 4 TSD4M150F TSD4M150V SGS-THOMSON pBv;S IQÄ1Tß»D gS N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS(on Id TS D 4M 150F/V 100 V 0.014 0 135 A . ■ ■ . « . ■ ■ HIGH CURRENT POWER MOS MODULE
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TSD4M150F
TSD4M150V
TSD4M150F/V
IRFP150
TSD4M150V
T-91-20
O-240)
ba102
TSD4M150F
T-39-15
sc0305
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