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    PTFA260451E Price and Stock

    Infineon Technologies AG PTFA260451E V1

    RF MOSFET LDMOS 28V H-30265-2
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    DigiKey PTFA260451E V1 Tray
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    Bristol Electronics PTFA260451E V1 870
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    Quest Components PTFA260451E V1 696
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    PTFA260451E Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PTFA260451E Infineon Technologies 2400 MHz to 2700 MHz; Package: PG: H-30265-2; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,620.0 - 2,680.0 MHz; P1dB (typ): 45.0 W; Supply Voltage: 28.0 V; Original PDF
    PTFA260451E V1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 45W H-30265-2 Original PDF
    PTFA260451EV1 Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 45W H-30265-2 Original PDF

    PTFA260451E Datasheets Context Search

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    PTFA260451E

    Abstract: No abstract text available
    Text: Preliminary PTFA260451E PTFA260451F Thermally Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description Features The PTFA260451E and PTFA260451F are thermally enhanced 45watt is internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally enhanced packaging


    Original     		PDF PTFA260451E PTFA260451F 45watt CDMA2000

    k 2679

    Abstract: PTFA260451E BCP56 LM7805 INFINEON PHILIPS
    Text: PTFA260451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2.62 – 2.68 GHz Description The PTFA260451E is a thermally-enhanced 45-watt, internallymatched GOLDMOS FET intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications from 2.62 to 2.68 GHz. Thermallyenhanced packaging provide the coolest operation available. Full


    Original     		PDF PTFA260451E PTFA260451E 45-watt, CDMA2000, CDMA2000 k 2679 BCP56 LM7805 INFINEON PHILIPS

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000, Super3G 3GPP TSG RAN , and WiMAX applications


    Original     		PDF PTFA260451E PTFA260451F 45-watt, CDMA2000, H-30265-2 PTFA260451F* H-31265-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA260451E PTFA260451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2.62 – 2.68 GHz Description The PTFA260451E and PTFA260451F are thermally-enhanced 45-watt, internally matched GOLDMOS FETs intended for CDMA2000 applications from 2.62 to 2.68 GHz. Thermally-enhanced


    Original     		PDF PTFA260451E PTFA260451F 45-watt, CDMA2000 PTFA260451F*

    PG-DSO-20

    Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
    Text: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test


    Original     		PDF PG-DSO-20 PG-RFP-10 H-34265-8 H-33265-8 H-30248-2 H-36248-2 H-33288-2 H-31248-2 H-37248-2 H-34288-2 PG-DSO-20 a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M

    PTFB182503FL

    Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503
    Text: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production


    Original     		PDF PTFA041501E PTFA041501F PG-DSO-20-63 PG-RFP-10 H-33265-8 H-34265-8 H-30260-2 H-36260-2 H-30265-2 H-30248-2 PTFB182503FL PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503