PN313
Abstract: PNZ313
Text: PIN Photodiodes PNZ313 PN313 Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) (5.0) Device center 2-1.2±0.15 2.3±0.3 13 min. • Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
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PNZ313
PN313)
PN313
PNZ313
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PN313B
Abstract: PNZ313B vr301
Text: PIN Photodiodes PNZ313B PN313B PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light
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PNZ313B
PN313B)
PN313B
PNZ313B
vr301
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PN313
Abstract: PNZ313
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313 (PN313) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ313
PN313)
PN313
PNZ313
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PN313
Abstract: PNZ313 R-102
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313 (PN313) Silicon planar type For optical control systems • Features Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
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2002/95/EC)
PNZ313
PN313)
80asures
PN313
PNZ313
R-102
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PNZ313B
Abstract: VR301
Text: PIN Photodiodes PNZ313B PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light
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PNZ313B
PNZ313B
VR301
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PN313
Abstract: PNZ313
Text: PIN Photodiodes PNZ313 PN313 PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light
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PNZ313
PN313)
PN313
PNZ313
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313 (PN313) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) (5.0) Device center 2-1.2±0.15 2.3±0.3 13 min. • Fast response which is well suited to high speed modulated light
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2002/95/EC)
PNZ313
PN313)
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Untitled
Abstract: No abstract text available
Text: PIN Photodiodes PNZ313 PIN Photodiode Unit : mm For optical control systems 7.0±0.5 Anode mark ø1.6 Device center 8.0±0.5 5.0 Features 2-1.2±0.15 2-0.6±0.15 0.41±0.15 13 min. 2.3±0.3 Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns typ.
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PNZ313
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PN313B
Abstract: PNZ313B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ313B
PN313B)
PN313B
PNZ313B
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PN313B
Abstract: PNZ313B
Text: PIN Photodiodes PNZ313B PN313B Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features (5.0) 8.0±0.5 13 min. Device center 2-1.2±0.15 2.3±0.3 • Fast response which is well suited to high speed modulated light
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PNZ313B
PN313B)
PN313B
PNZ313B
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features (5.0) 8.0±0.5 13 min. Device center 2-1.2±0.15 2.3±0.3 • Fast response which is well suited to high speed modulated light
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2002/95/EC)
PNZ313B
PN313B)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313 (PN313) Silicon planar type For optical control systems • Features M Di ain sc te on na tin nc ue e/ d Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
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2002/95/EC)
PNZ313
PN313)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems Unit: mm 7.0±0.5 Anode mark (φ1.6) • Features 2-1.2±0.15 2.3±0.3 13 min. M Di ain sc te on na tin nc ue e/
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2002/95/EC)
PNZ313B
PN313B)
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PN313B
Abstract: PNZ313B
Text: This product complies with the RoHS Directive EU 2002/95/EC . PIN Photodiodes PNZ313B (PN313B) Silicon planar type For optical control systems • Features Fast response which is well suited to high speed modulated light detection: tr , tf = 50 ns (typ.)
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2002/95/EC)
PNZ313B
PN313B)
PN313B
PNZ313B
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TC4009BP
Abstract: DNP319 tps607 TLP1230 TLP1200 GP1S093HCZ0F SG2751 2SC1959 IS471FE PT380F
Text: 光センサ ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106CH1
TLP1025
TLP1029
TLP1033A
TLP1034
TLP1201A
TLP1201A
TLP1204
TC4009BP
DNP319
tps607
TLP1230
TLP1200
GP1S093HCZ0F
SG2751
2SC1959
IS471FE
PT380F
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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