PNZ263L
Abstract: No abstract text available
Text: Darlington Phototransistors PNZ263L PN263L-(NC Silicon planar type 1.95±0.25 1.4±0.2 φ1.1 3.0±0.3 0.9 0.5 1.1 0.8 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO
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PNZ263L
PN263L-
PNZ263L
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ263L (PN263L-(NC) Silicon planar type 1.95±0.25 1.4±0.2 φ1.1 3.0±0.3 0.9 0.5 1.1 0.8 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open)
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2002/95/EC)
PNZ263L
PN263L-
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Untitled
Abstract: No abstract text available
Text: Darlington Phototransistors PNZ263L PN263L-(NC Silicon planar type 1.4±0.2 0.9 0.5 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open) VECO 5 V Collector current IC 30 mA
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PNZ263L
PN263L-
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PNZ263L
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Darlington Phototransistors PNZ263L (PN263L-(NC) Silicon planar type 1.4±0.2 0.9 0.5 Not soldered 2.15 max. R0.5 Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 20 V Emitter-collector voltage (Base open)
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2002/95/EC)
PNZ263L
PN263L-
PNZ263L
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PNZ263L
Abstract: No abstract text available
Text: Darlington Phototransistors PNZ263L PN263L-(NC Darlington Phototransistor 0.8 max. Gate the rest Unit : mm ø1.1 R0.5 3.5±0.3 1.1 2.4 1.1 0.8 Features 3.0±0.3 Not soldered 2.15 max. For optical control systems Darlington output, high sensitivity 28.0 +1.0
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PNZ263L
PN263L-
PNZ263L
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DARLINGTON phototransistor 14
Abstract: PNZ263L
Text: Darlington Phototransistors PNZ263L Darlington Phototransistor 0.8 max. Gate the rest Unit : mm ø1.1 R0.5 3.5±0.3 1.1 2.4 1.1 0.8 Features 3.0±0.3 Not soldered 2.15 max. For optical control systems Darlington output, high sensitivity 28.0 +1.0 –0.5 14.3
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PNZ263L
DARLINGTON phototransistor 14
PNZ263L
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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