Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs:
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2002/95/EC)
PNZ115
PN115)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 M Di ain sc te on na tin nc ue e/ d 2.0 • High sensitivity
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2002/95/EC)
PNZ115
PN115)
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PN115
Abstract: PNZ115
Text: Phototransistors PNZ115 PN115 Silicon NPN Phototransistor Unit : mm For optical control systems High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ.) Fast response : tr = 5 µs (typ.) Side-view type package 3-0.45±0.2
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PNZ115
PN115)
PN115
PNZ115
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PN115
Abstract: PNZ115
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type For optical control systems • Features ue pl d in ea an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low
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2002/95/EC)
PNZ115
PN115)
PN115
PNZ115
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ115 Silicon NPN Phototransistor Unit : mm For optical control systems High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. typ. Fast response : tr = 5 µs (typ.) Side-view type package 3-0.45±0.2 12.5 min.
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PNZ115
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ115 PN115 Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)
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PNZ115
PN115)
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Untitled
Abstract: No abstract text available
Text: Phototransistors PNZ115 PN115 Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)
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PNZ115
PN115)
LSTLR103-001
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PN115
Abstract: PNZ115 K50010
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type For optical control systems • Features High sensitivity Wide directivity characteristics, suited for detecting GaAs LEDs: θ = 35° (typ.)
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2002/95/EC)
PNZ115
PN115)
PN115
PNZ115
K50010
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Phototransistors PNZ115 (PN115) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 Not soldered 2.4 4.8±0.3 1.9 2.0 • High sensitivity • Wide directivity characteristics, suited for detecting GaAs LEDs:
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2002/95/EC)
PNZ115
PN115)
LSTLR103-001
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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mip411
Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
mip411
MIP2F4
MIP2F3
AN12947a
mip2f2
MIP2F20MS
MIP2F40MS
mip2e7dmy
panasonic inverter dv 700 manual
mip291
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PNZ335
Abstract: PN126S PNA1801 PNA1801L LNA1401L cd pick up PNA4602M visible photodetector PNZ334 PN300F
Text: Characteristics List • Photodetector 11 Photodetector ■ PIN Photodiode Absolute Maximum Ratings VR V PD (mW) ID VR max. VR (V) (nA) (V) 30 10 50 Part No. PNA3W01L (PN307) Electro • Optical Characteristics Ta = 25°C IL λP L min. typ. VR (lx) (µA) (nm) (V)
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PNA3W01L
PN307)
PNZ313
PN313)
PNZ300F
PN300F)
PNZ313B
PN313B)
PNZ323
PN323)
PNZ335
PN126S
PNA1801
PNA1801L
LNA1401L
cd pick up
PNA4602M
visible photodetector
PNZ334
PN300F
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