PN930 Search Results

2N3859A

Abstract: MPS6521 PN930 TIS97
Contextual Info: This Material NPN Transistors cr NPN Low Level Amplifiers continued Ü1 a fc-j b-1 Copyrighted UJ V Device No. Case Style a CD PN930 o -E TO-92 (92) CBO V y ceo V EBO (V) Min (V) Min (V) Min 45 45 5 *CBO (nA) @ “ Max ' ' 10 By Its Respective tr ru 2N3859A

Contextual Info: Available as: RF AMPLIFIER MODEL TM9302 TM9302, 4 Pin TO-8 T4 TN9302, 4 Pin Surface Mount (SM3) FP9302, 4 Pin Flatpack (FP4) BX9302, Connectorized Housing (H1) PN9302, Reduced Size Surface Mount (SM11) Features Typical Intermodulation Performance at 25 º C

PN930

Contextual Info: PN930 PN930 NPN General Purpose Amplifier • This device is designed for low noise, high gain, general purpose applications at collector currents from 1µA to 50mA. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA=25°C unless otherwise noted

SM11

Abstract: TM9302
Contextual Info: Available as: RF AMPLIFIER MODEL TM9302, 4 Pin TO-8 T4 TN9302, 4 Pin Surface Mount (SM3) FP9302, 4 Pin Flatpack (FP4) BX9302, Connectorized Housing (H1) PN9302, Reduced Size Surface Mount (SM11) Features Typical Intermodulation Performance at 25 º C • Medium Output Power: +10 dBm Typical

2N5088

Abstract: CBVK741B019 F63TNR PN2222N PN930
Contextual Info: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

Contextual Info: A vailable as: RF AMPLIFIER MODEL TM9302 TM 9302, TN9302, FP9302, BX9302, PN9302, 4 Pin TO-8 T4 4 Pin Surface Mount (SM3) 4 Pin Flatpack (FP4) Connectorized Housing (H1) Reduced Size Surface Mount (SM11) Features Typical Intermodulation Performance at 2 5 0 C

PN930

Contextual Info: S E M IC O N D U C T O R PN930 NPN General Purpose Amplifier T his device is designed for low noise, high gain, general purpose applications at collector currents from 1 |i to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS

PN930

Abstract: 2N5088 equivalent 2N5088
Contextual Info: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol

PN930

Abstract: 2N5088
Contextual Info: SEMiCONDUCTQR PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1pi to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS

Contextual Info: PN9302 / PN9302 Amplifier Performance Datasheet Cross Reference Guide PN9302 / PN9302* * Part number for additional environmental screening. Performance Data Package Drawing Frequency 1700.0 - 2300.0 MHz Gain 10.5 dB Typical 8.5 dB Min Noise Figure 5.0 dB Typical

Contextual Info: S E M IC O N D U C T O R . PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1p to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS

Contextual Info: PN930 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)30m Absolute Max. Power Diss. (W)600m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MPS9631

Abstract: T1S91 MPS9632 MPS9630 TIS92 MPS9633 SE4010 TIS61 MPS9600 MPS9634
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ NO. RITY MPS9600 MPS9601 MPS9602 MPS9630 MPS9631 N N N N N CASE TO-92A TO-92A TO-92A TO-92A TO-92A VCE sat HFE MAXIMUM RATINGS Pd IC VCEO (mW) (mA) (V) min max 300 300 300 350 350 100 100 100 100 100 12

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

ps3000

Contextual Info: 1500 WATTRM SERIES FRONT ENDS FEATURES Like the rest of the RM Series I for t Encs these W ide ac in p u t range 1500 watt supplies are designed ,o support high-availability applications suet, as mission- P ow er fa c to r corre cte d critical computing. An optional irterna' ORing

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

MPSA18 BC550

Abstract: marking 2C marking 2D BC846 National Semiconductor Discrete catalog MPSA18 BC558 BC184 BC550 tr bc548 2N3117 bc857 to 92 2N5210 national
Contextual Info: . Low Noise Am plifiers t,8E J> r Device VcEQ «l>t (Volte) Min 65 NPN Min Max BC546 110 450 BC846 110 300 Typ T0-92(97) 1,2C 10 300 Typ TO-236* 1,2C Notes 2 75 475 2 10 300 Typ TO-92(97) 1,2C 475 2 10 300 Typ TO-236* 1,2C 100 500 0.01 3 60 2N2484 TO-18 2F

2N339IA

Contextual Info: Low Level and General Purpose Amplifiers TY PE NO. PO LA ­ R IT Y M A X IM U M R A T IN G S CA SE Pd m W Ic (m A ) VcEO (V) H FE m in m ax Ic (m A ) V ce V CE(sat) m ax (V) (V) It m in Cob m ax Ic (m A ) (M H z) (M H z) N .F. m ax (dB ) MPSD06 MPSD56 N

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

2N3859A

Abstract: TIS97
Contextual Info: NPN Transistors OETTOïT I NPN Low Level Amplifiers V Device No. • ro TO-92 92 CBO V CEO V EBO (V) Min M Min (V) Min 45 45 5 ’c B O v (nA) @ “ Max ' ' 10 V CE(SAT) Max (mA) V“ (V) 600 10 0.5 0.1 5 5 5 h FE Min 45 150 100 @ 300 ’c & 60 6 500 18

T1S97

Abstract: T1S-97 TIS90 tis86
Contextual Info: TO-92 Plastic Package Transistore NPN Electrical Characteristics (Ta=25‘C, Unless Otherwise Specified) Maximum Ratings Type No. PN7055 ^C BO ^CEO ^EBO PD (V) Min (V) Min (V) Min (W) 220 220 7 (A) 0Tc=25nc 0.625 0.5 'ceo (MA) Max 0.1 ^CB 'c es (V) (HA)