PE60QL03N
Abstract: No abstract text available
Text: SBD MODULE PE60QL03N 60A/30V OUTLINE DRAWING FEATURES * Three-Arms, Cathode Common to Base Plate * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification
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PE60QL03N
0A/30V
E187184
PE60QL03N
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Untitled
Abstract: No abstract text available
Text: SBD MODULE PE60QL03N 60A/30V OUTLINE DRAWING FEATURES * Three-Arms, Cathode Common to Base Plate * Extremely Low Forward Voltage Drop * Low Power Loss, High Efficiency * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * High Frequency Rectification
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0A/30V
PE60QL03N
E187184
PE60QL03N
60QL03N
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PC60QL03N
Abstract: PE60QL03N
Text: SBD 60A Avg 30 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PC PC 1 PC60QL03N PE60QL03N （単位 Dimension：mm） PE 3 φ φ BASE PE 1 2 3 BASE ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧
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PC60QL03N
PE60QL03N
PC60QL03N/PE60QL03N
25VRM
25IFM
sDuty1/50
PC60QL03N
PE60QL03N
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Untitled
Abstract: No abstract text available
Text: SBD 60A Avg 30 Volts •回路図 CIRCUIT ■外形寸法図 OUTLINE DRAWING PC PC 1 PC60QL03N PE60QL03N （単位 Dimension：mm） PE 3 φ φ BASE PE 1 2 3 BASE ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧
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PC60QL03N
PE60QL03N
PC60QL03N/PE60QL03N
25VRM
25IFM
sDuty1/50
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PT76S16
Abstract: d2n203le 10ERB20 508RP FCHS20A 300MCB
Text: Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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508RP
Abstract: 10ERB20 d2n202le D2W220CD FCH10U15 FCU20A40
Text: NO. 42 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PDM5001
Abstract: PDT400N16 pah60n8cm PHMB50E6CL PHT250N16 PHT400N16 PD100KN16 PAH100N8CM PT76S16 PAT400N16
Text: Contents Page Rectifier Diode PH PC PD PE PF PB PT C2 C3 C4,C5 C5 C6 C6 C7,C8 Fast Recovery Diode PH-F, PC-F, PD-F P2H-F C9 C10 Schottky Barrier Diode PC-Q, PE-Q, PQ-Q P2H-Q C11 C12 Thyristor plus Diode PHT PDT PAT PFT PAH PCH PDH PKH PBH, PBH-A, PBF PGH
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C3557
PH1503
PH150
PDM5001
PDT400N16
pah60n8cm
PHMB50E6CL
PHT250N16
PHT400N16
PD100KN16
PAH100N8CM
PT76S16
PAT400N16
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FCGS20A12
Abstract: FCHS10A12 EC10QS04 TE12L d2n203le 10ERA60 FCHS20A 20NFB60 FCU20A40 PAH100N8CM 10eda10
Text: NO. 43 Power Semiconductors Catalog Nihon Inter Electronics Corporation 安全設計に関するお願い ●当社は常に製品の品質信頼性の維持向上に努めておりますが、一般に半導体製品では故障がある確率で起こることは避けられ
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PE3012N
Abstract: PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012 PC6016
Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N
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PC308
PC808
PC1008
PC1508
PC2008
PC3012
PF308N
PF608N
PF1008N
PF1012N
PE3012N
PC10012
PC1008
PC1508
PC2008
PC3016
PC308
PC6012
PC6016
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IR 529
Abstract: PC6012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6016
Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N
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PC308
PC808
PC1008
PC1508
PC2008
PC3012
PB3012N
PE6012N
17-KutyfiiS
PE10012N
IR 529
PC6012
PC10012
PC1008
PC1508
PC2008
PC3016
PC308
PC6016
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SE 135 F
Abstract: PC15012 PC10012 PC1008 PC1508 PC2008 PC3012 PC3016 PC308 PC6012
Text: — M m s PC308 PC608 PC1008 PC1508 PC2008 PC3012 PC3016 PC6012 PC6016 PC10012 PC10016 PC15012 PCI 5016 PD50F3 PD50F4 PD50F5 PD308 PD608 PD1008 PD1508 PD2008 PD3012 PD3016 PD6012 PD6016 PD10012 PD10016 PD15012 PD15016 PE60Q04N PE60QL03N PE80Q04N PE80QL03N
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PC308
PC808
PC1008
PC1508
PC2008
PC3012
PB3012N
PE6012N
17-KutyfiiS
PE10012N
SE 135 F
PC15012
PC10012
PC1008
PC1508
PC2008
PC3016
PC308
PC6012
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L207 DIODE
Abstract: Diode SY 345 l20-7 PE60QL02N PE60QL03N
Text: SCHOTTKY BARRIER DIODE MODULE PE60QL02N PE60QL03N 66A/20~30v FEATURES ° T h r e e - A r m s , C a t h o d e Co m m o n to Bas e Pl a t e ° E x t r e m e l y L o w F o r w a r d V o l t a g e Dro p o L o w P o w e r Loss, High Efficiency 8 H i g h Su r g e C a p a b i l i t y
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6A/20
PE60QL02N
PE60QL03N
bblS123
000212S
bbl51EB
L207 DIODE
Diode SY 345
l20-7
PE60QL03N
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE MODULE PE60QL02N PE60QL03N 66A/20~30v FEATURES 0 T h r e e - A r m s , C a t h o d e C o m m o n to Bas e Pl a t e 0 E x t r e m e l y L o w F o r w a r d V o l t a g e Dro p « L o w P o w e r Loss, High Efficiency ° High Surge Capability
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PE60QL02N
PE60QL03N
6A/20
PE60QL02N
bblS123
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE MODULE PE60QL02N PE60QL03N 6 6 A/2 o ~ 3 o v FEATURES 'Three -Arms, Cathode Common to Base Plate ° Extremely Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability MAXIMUM R A T IN G S '\TYPE Voltage Rating
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PE60QL02N
PE60QL03N
PE60QL03N
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F10P100
Abstract: 10EF1 12MF30 diode f40c 60KQ10B 30MF40 F10KF20B 12MF40 C16P04Q C25P40F
Text: SELECTORS GUIDE S c h o ttk y B a rrie r Diode-Single C ase Style Io A V FM (V) 1.0 0.45 30 11EQS03L 52 0.45 20 ♦ 11EQS02L 50 0.55 30 40 ♦ 11EQ03 11EQ04 60 0.58 50 60 ♦ 11EQ05 11EQ06 62 0.85 90 100 ♦ 11EQ09 11EQ10 64 0.55 30 40 ♦ 11EQS03 11EQS04
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11EQS03L
11EQS02L
11EQ03
11EQ04
11EQ05
11EQ06
11EQ09
11EQ10
11EQS03
11EQS04
F10P100
10EF1
12MF30
diode f40c
60KQ10B
30MF40
F10KF20B
12MF40
C16P04Q
C25P40F
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