IC-8817
Abstract: IC-3237
Text: DATA SHEET MOS INTEGRATED CIRCUIT µ PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The µPD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The µPD431009 is packed in 36-pin plastic SOJ. Feature
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PD431009
128K-WORD
PD431009
36-pin
PD431009LE-15
PD431009LE-17
PD431009LE-20
IC-8817
IC-3237
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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PD7500
X10679EJAV0SG00
MF-1134)
1995P
uPC2581
uPC2002
2sd1557
uPA67C
uPB582
upc1237
uPC317
2P4M PIN DIAGRAM
2SC4328
uPC157
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D431000AGZ
Abstract: d431000a UPD431OOOAGZ-7OLL-KKH d431232 d431000ag D431000 ypd431000a D4310 d431000all 031T
Text: Low Power SRAM 7 DATA SHEET NEC MOS INTEGRATED CIRCUIT ~PD431000A 1 M-BIT CMOS STATIC RAM 128 K-WORD BY 8-BIT Description ThepPD431000A isa high speed,lowpower, and l,048,576bits 131,072 words x8 bits CMOS static RAM. The vPD431OOOA has two chip enable pins (CEI, CE2) to extend the capacity. And battery backup is
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PD431000A
ThepPD431000A
576bits
vPD431OOOA
uPD431OOOA
32-pin
yPD431232L
013io
D431000AGZ
d431000a
UPD431OOOAGZ-7OLL-KKH
d431232
d431000ag
D431000
ypd431000a
D4310
d431000all
031T
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿ ¿ P D 431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ^PD 431009 is a high speed, low pow er, 1 179 072 bits 131 072 w o rd s by 9 bits C M O S static RAM. The ¿iPD431009 is packed in 36-pin plastic SOJ.
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OCR Scan
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PDF
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128K-WORD
iPD431009
36-pin
PD431009LE-15
iPD431Q09LE-17
b427525
DGb42T2
P431009
PD431009.
iPD431009LE:
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431009L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description T h e /iP D 4 3 1 0 0 9 L is a h ig h s p e e d , lo w p o w e r, 1, 179, 64 8 b its 131, 072 w o r d s b y 9 b its C M O S s ta tic R A M .
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PDF
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uPD431009L
128K-WORD
431009L
040-O
b457525
JUPD431009LLE:
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IC-3237
Abstract: No abstract text available
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /¿PD431009 is a high speed, lo w p o w e r, 1 179 072 b its 131 072 w o rd s by 9 b its CMOS sta tic RAM. The ¿iPD431009 is packed in 36-pin p la stic SOJ.
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OCR Scan
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PDF
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uPD431009
128K-WORD
PD431009
iPD431009
36-pin
Stan-400A
040-ooos
/JPD431009.
/iPD431009LE:
IC-3237
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Untitled
Abstract: No abstract text available
Text: SEC ¡j PD431009 131,072 x 9-Bit Static CMOS RAM NEC Electronics Inc. October 1992 Description Pin Configuration The /JPD431009 is a 131,072-word by 9-bit static RAM fabricated with advanced silicon-gate technology. Its unique design uses CMOS peripheral circuits and Nchannel memory cells to make the /L/PD431009 a high
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PD431009
/JPD431009
072-word
/L/PD431009
iPD431009
36-pin
36-pin,
400-mil
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Æ MOS INTEGRATED CIRCUIT C ¿¿P D 4 3 1 0 0 9 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The ¿¿PD431009 is a high speed, low power, 1 179 072 bits 131 072 words by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ.
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OCR Scan
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PDF
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128K-WORD
PD431009
36-pin
PD431009LE-20
040laoo6
016to
QQSl33b
PD431009
iPD431009.
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IC-3237
Abstract: 431009le
Text: MOS INTEGRATED CIRCUIT HPD431009 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT D e s c rip tio n The ^PD431009 is a high speed, lo w pow er, 1 179 072 bits 131 072 w o rds by 9 bits CMOS static RAM. The /¿PD431009 is packed in 36-pin plastic SOJ. F e a tu re
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OCR Scan
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PDF
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uPD431009
128K-WORD
PD431009
36-pin
PD431009LE-15
/PD431009LE-17
431009LE-20
PD431009.
iiPD431009LE:
IC-3237
431009le
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿PD431009L 1M-BIT CMOS FAST STATIC RAM 128K-WORD BY 9-BIT Description The /PD431009L is a high speed, low power, 1, 179, 648 bits 131,072 words by 9 bits CMOS static RAM. O perating supply voltage is 3.3 V ± 0.3 V.
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OCR Scan
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PDF
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uPD431009L
128K-WORD
/jPD431009L
36-pin
//PD431009LLE-A17
iiPD431009LLE-A20
P36LE-400A
016tSSSs
/jPD431009L.
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