29F800
Abstract: No abstract text available
Text: NEW PRODUCTS 3 8M-BIT FLASH MEMORY µPD29F008L/µPD29F800L Yoshihiro Shimamura Photo 1 8M Flash Memory µPD29F800LGZ µPD29F800Lxx-xxxT word mode Protection Block (8k Words) Condition Block (4k Words) Condition Block (4k Words) Main Block (16k Words) Main Block
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PD29F008L/
PD29F800L
PD29F800LGZ
PD29F800Lxx-xxxT
7E000H
7D000H
7C000H
78000H
77FFFH
70000H
29F800
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PPD29F800L
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD29F800L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The PD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
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Original
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PPD29F800L
16-BIT
PPD29F800L
608bit
word/16
word/32
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD29F800L 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The PD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
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Original
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PDF
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mPD29F800L
16-BIT
mPD29F800L
608bit
word/16
word/32
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT(WORD MODE) Description The ^PD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
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OCR Scan
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PDF
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16-BIT
uPD29F800L
608bit
word/16
word/32
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 8 M-BIT CMOS 3.0 V-ONLY FLASH MEMORY 1 M-WORD BY 8-BIT BYTE MODE / 512 K-WORD BY 16-BIT (WORD MODE) Description The ¿PD29F800L is an electrically programmable/erasable high-speed 3.0 V-only flash memory with a 8,388,608bit configuration.
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OCR Scan
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PDF
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16-BIT
iPD29F800L
608bit
ord/16
word/32
S48GZ-50-MKH
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