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    MJE 13031

    Abstract: LA 7693
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR PA836TF OUTLINE DIMENSIONS Units in mm FEATURES LOW NOISE: Package Outline TS06 Q 1:NF = 1.5 dB TYP at f = 2 G Hz, V c e = 3 V , lc = 3 m A 2.1 ±0.1 Q 2:NF = 1.7 dB TYP at f = 2 G Hz, V c e = 1 V, Ic = 3 mA


    OCR Scan     		PDF UPA836TF NE685, NE688) PA836TF hie-14 NE68530 NE68830 UPA836TF-T1 UPA833TF MJE 13031 LA 7693

    nec 14312 transistor

    Abstract: tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec
    Text: PRELIMINARY DATA SHEET Silicon Transistor NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE PACKAGE DRAWINGS (Unit:mm) DESCRIPTION The PA836TF has tw o different built-irvtransistors (Q1 and Q 2) for low noise amplification in the VHF band to UHF


    OCR Scan     		PDF uPA836TF 2SC5193, 2SC4959) 2SC4959 nec 14312 transistor tag 9040 tag 8538 TM 5503 tag 8504 nec 6681 TAG 8743 tag 14472 8504 nec