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    P8006EDG Search Results

    P8006EDG Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    P8006EDG Niko Semiconductor P-Channel Logic Level Enhancement FET Original PDF

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    P8006EDG

    Abstract: nikosem niko-sem
    Text: NIKO-SEM P8006EDG P-Channel Logic Level Enhancement TO-252 Lead-Free Mode Field Effect Transistor D PRODUCT SUMMARY V BR DSS RDS(ON) ID -55V 80mΩ -8A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


    Original     		PDF P8006EDG O-252 AUG-19-2004 P8006EDG nikosem niko-sem

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32411LA-S •General description ■Features ELM32411LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-55V Id=-7A Rds(on) < 80mΩ (Vgs=-10V) Rds(on) < 150mΩ (Vgs=-4.5V)


    Original     		PDF ELM32411LA-S ELM32411LA-S P8006EDG O-252 AUG-19-2004