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    OCT2011 Search Results

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    L30ESDL5V0C3-2

    Abstract: Diode LT n5 LT n5 ltn5 340W L30ESDL5
    Text: L30ESDL5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 340 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-2 is a ultra low capacitance Electrostatic Discharge ESD protection diode in a SOT23 (TO236AB) small


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    PDF L30ESDL5V0C3-2 L30ESDL5V0C3-2 O236AB) Diode LT n5 LT n5 ltn5 340W L30ESDL5

    mbr20100ct liteon

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR MBR2070CT thru 20100CT REVERSE VOLTAGE - 70 to 100 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    PDF MBR2070CT 20100CT O-220AB O-220AB mbr20100ct liteon

    2550CT

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR MBR2530CT thru 2560CT REVERSE VOLTAGE - 30 to 60 Volts FORWARD CURRENT - 25 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    PDF MBR2530CT 2560CT O-220AB O-220AB 2550CT

    Untitled

    Abstract: No abstract text available
    Text: L18ESD5V0C3-2 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 180 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L18ESD5V0C3 is a dual voltage suppressor designed to protect components which are connected to data and transmission lines against Electro Static Discharge ESD ,


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    PDF L18ESD5V0C3-2 L18ESD5V0C3

    SLP1610P4

    Abstract: 010Tj
    Text: LITE-ON SEMICONDUCTOR L15ESDL5V0N6-2 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP1610P4 The L15ESDL5V0N6-2 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been


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    PDF L15ESDL5V0N6-2 L15ESDL5V0N6-2 SLP1610P4 SLP1610P4 010Tj

    WG16A

    Abstract: 5962-9166703QYA LM2941WGRLQMLV LM2941GWRLQMLV 5962R9166702VYA
    Text: LM2941QML 1A Low Dropout Adjustable Regulator and the load. Familiar regulator features such as short circuit and thermal overload protection are also provided. General Description The LM2941 positive voltage regulator features the ability to source 1A of output current with a typical dropout voltage of


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    PDF LM2941QML LM2941 WG16A 5962-9166703QYA LM2941WGRLQMLV LM2941GWRLQMLV 5962R9166702VYA

    Untitled

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


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    PDF P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L05ESDL5V0NA-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 50 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP2510P8 The L05ESDL5V0NA-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been


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    PDF L05ESDL5V0NA-4 SLP2510P8 L05ESDL5V0NA-4

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR L15ESDL5V0NA-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 150 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SLP2510P8 The L15ESDL5V0NA-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been


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    PDF L15ESDL5V0NA-4 SLP2510P8 L15ESDL5V0NA-4

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10A: Driving SiC Junction Transistors SJT with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Introduction GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJT) with current ratings ranging from 4 A to 16 A. SiC


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    PDF AN-10A: Oct-2011. Nov-2011. GA06JT12-247

    L30ESDL5V0C3-1

    Abstract: No abstract text available
    Text: L30ESDL5V0C3-1 LITE-ON SEMICONDUCTOR STAND-OFF VOLTAGE - 5 Volts POWER DISSIPATION - 300 WATTS DUAL ESD PROTECTION DIODES GENERAL DESCRIPTION SOT23 The L30ESDL5V0C3-1 is a dual voltage suppressor designed to protect components which are connected to data and


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    PDF L30ESDL5V0C3-1 L30ESDL5V0C3-1

    MBR20200CT LITE-ON

    Abstract: MBR20200CT
    Text: LITE-ON SEMICONDUCTOR MBR20200CT REVERSE VOLTAGE - 200 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    PDF MBR20200CT O-220AB O-220AB MBR20200CT LITE-ON MBR20200CT

    smd diode GW

    Abstract: LM2991GW-QML
    Text: LM2991QML Negative Low Dropout Adjustable Regulator General Description Features The LM2991 is a low dropout adjustable negative regulator with a output voltage range between −2V to −25V. The LM2991 provides up to 1A of load current and features a On /Off pin for remote shutdown capability.


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    PDF LM2991QML LM2991 smd diode GW LM2991GW-QML

    Untitled

    Abstract: No abstract text available
    Text: P3C1256L LOW POWER 32K X 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Wide Range Power Supply: 2.7V to 3.6V Three-State Outputs Fully TTL Compatible Inputs and Outputs


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    PDF P3C1256L 70mA/85mA 28-Pin P3C1256L 144-bit 32Kx8. SRAM143

    MBR3045CTW

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR MBR3045CTW REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 30 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    PDF MBR3045CTW O-220AB O-220AB MBR3045CTW

    P3C1256L

    Abstract: No abstract text available
    Text: P3C1256L LOW POWER 32K x 8 STATIC CMOS RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70/85 Wide Range Power Supply: 2.7V to 3.6V Easy Memory Expansion Using CE and OE Inputs Three-State Outputs


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    PDF P3C1256L 70mA/85mA 28-Pin P3C1256L 144-bit 32Kx8. SRAM143

    SNVS390A

    Abstract: CLGA 10 lead nac
    Text: LM2941QML www.ti.com SNVS390A – AUGUST 2009 – REVISED OCTOBER 2011 LM2941QML 1A Low Dropout Adjustable Regulator Check for Samples: LM2941QML FEATURES 1 • 2 • • • Available with radiation guarantee – ELDRS Free 100 krad Si Output voltage adjustable from 5V to 20V


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    PDF LM2941QML SNVS390A LM2941QML LM2941 SNVS390A CLGA 10 lead nac

    Untitled

    Abstract: No abstract text available
    Text: Application Note AN-10B: Driving SiC Junction Transistors SJT : Two-Level Gate Drive Concept Introduction Two-Level SJT Gate Drive Circuit GeneSiC Semiconductor is commercializing 1200 V and 1700 V SiC Junction Transistors (SJTs) with current ratings ranging from 3 A to 50


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    PDF AN-10B: AN-10A Nov-2011. GA06JT12-247

    P4C187

    Abstract: No abstract text available
    Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)


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    PDF P4C187/P4C187L P4C187L) 22-Pin 24-Pin 290x490 28-Pin 350x550 P4C187/P4C187L 536-bit P4C187

    Untitled

    Abstract: No abstract text available
    Text: TD10M GLASS PASSIVATED BRIDGE RECTIFIERS REVERSE VOLTAGE – 1000 Volts FORWARD CURRENT – 1.0 Ampere TD FEATURES • Rating to 1000V PRV • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • The plastic material has UL flammability classification


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    PDF TD10M

    LC51

    Abstract: L12ESDL5V0C6-4 l12esdl5v0
    Text: LITE-ON SEMICONDUCTOR L12ESDL5V0C6-4 STAND-OFF VOLTAGE - 5.0 Volts POWER DISSIPATION - 120 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION SOT23-6L The L12ESDL5V0C6-4 is ultra low capacitance TVS arrays designed to protect high speed data interfaces. This series has been specifically


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    PDF L12ESDL5V0C6-4 L12ESDL5V0C6-4 OT23-6L OT23-6L LC51 l12esdl5v0

    smd diode GW

    Abstract: No abstract text available
    Text: LM2991QML LM2991QML Negative Low Dropout Adjustable Regulator Literature Number: SNVS392A LM2991QML Negative Low Dropout Adjustable Regulator General Description Features The LM2991 is a low dropout adjustable negative regulator with a output voltage range between −2V to −25V. The


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    PDF LM2991QML LM2991QML SNVS392A LM2991 smd diode GW

    Untitled

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR MBR2045CTW REVERSE VOLTAGE - 45 Volts FORWARD CURRENT - 20 Amperes SCHOTTKY BARRIER RECTIFIERS TO-220AB FEATURES Metal of silicon rectifier,majority carrier conducton Guard ring for transient protection Low power loss, high efficiency


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    PDF MBR2045CTW O-220AB O-220AB

    MS1306

    Abstract: max5553
    Text: AK8180D 2.5V, 3.3V LVCMOS 1:10 Clock Fanout Buffer AK8180D Features Description The AK8180D is a member of AKM’s LVCMOS clock fanout buffer family designed for telecom, networking and computer applications, requiring a range of clocks with high performance and low


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    PDF AK8180D 250MHz 200ps 32-pin MPC9456 AK8180D Oct-2011 MS1306-E-01 MS1306 max5553