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    TT Electronics OPTEK Technology OP508FA

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    Onlinecomponents.com OP508FA 23,685
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    TT Electronics OPTEK Technology OP508FC

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    TT Electronics plc OP508FA

    Phototransistors Photo Transistor
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    Mouser Electronics OP508FA 1,855
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    OP508F Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Type PDF
    OP508F Unknown Semiconductor Master Cross Reference Guide Scan PDF
    OP508FA OPTEK Technology NPN Silicon Phototransistors Scan PDF
    OP508FA OPTEK Technology NPN Silicon Phototransistor Scan PDF
    OP508FA OPTEK Technology NPN silicon phototransistor. Scan PDF
    OP508FA OPTEK Technology NPN silicon phototransistor Scan PDF
    OP508FA TRW NPN Silicon Phototransistor Scan PDF
    OP508FB OPTEK Technology NPN Silicon Phototransistors Scan PDF
    OP508FB OPTEK Technology Phototransistor Module, 100nA Dark Current, 850nm Wavelength Scan PDF
    OP508FB OPTEK Technology NPN Silicon Phototransistor Scan PDF
    OP508FB OPTEK Technology NPN silicon phototransistor. Scan PDF
    OP508FB OPTEK Technology NPN silicon phototransistor Scan PDF
    OP508FB TRW NPN Silicon Phototransistor Scan PDF
    OP508FC OPTEK Technology NPN Silicon Phototransistors Scan PDF
    OP508FC OPTEK Technology NPN Silicon Phototransistor Scan PDF
    OP508FC OPTEK Technology NPN silicon phototransistor. Scan PDF
    OP508FC OPTEK Technology NPN silicon phototransistor Scan PDF
    OP508FC TRW NPN Silicon Phototransistor Scan PDF

    OP508F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers


    Original     		PDF OP168F, OP169, OP268F, OP269 OP168 OP268 OP169 OP269 OP168, OP268)

    OP168F

    Abstract: OP169 OP268 OP268FPS OP269 OP508F OP509 OP538F OP269A OP268FA
    Text: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers


    Original     		PDF OP168F, OP169, OP268F, OP269 OP168 OP268 OP169 OP269 OP168, OP268) OP168F OP169 OP268 OP268FPS OP508F OP509 OP538F OP269A OP268FA

    OPB960N55

    Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
    Text: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or


    Original     		PDF F-Distributors9-12-05 OPB960N55 marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51

    Untitled

    Abstract: No abstract text available
    Text: Plastic Infrared Emitting Diode OP168F, OP169, OP268F, OP269 Series OP168 OP268 Features: • • • • OP169 OP269 Flat lens for wide radiation angle OP168, OP268 Integral lens for narrow beam angle (OP169, OP269) Easily stackable on 0.100” (2.54 mm) hole centers


    Original     		PDF OP168F, OP169, OP268F, OP269 OP168, OP268) OP269) OP168 OP268

    Untitled

    Abstract: No abstract text available
    Text: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on


    Original     		PDF OPB711, OPB712 OPB711 OPB712 OPB711â

    OPB711

    Abstract: OPB712 REFLECTIVE OBJECT SENSOR OP168F OP268 OP508F OP538F photo darlington sensor reflective photo sensor DARLINGTON phototransistor 14
    Text: Reflective Object Sensor OPB711, OPB712 Features: • • • • Choice of phototransistor or photodarlington output Unfocused for sensing diffuse surface Low-cost plastic housing Choice of filter or unfiltered Product Photo Here Description: OPB711 consists of an infrared emitting diode and an NPN silicon phototransistor, mounted “side-by-side” on


    Original     		PDF OPB711, OPB712 OPB711 OPB712 REFLECTIVE OBJECT SENSOR OP168F OP268 OP508F OP538F photo darlington sensor reflective photo sensor DARLINGTON phototransistor 14

    Untitled

    Abstract: No abstract text available
    Text: Reflective Object Sensor OPB711, OPB712 Features: • Choice of phototransistor or photodarlington output  Unfocused for sensing diffuse surface  Low-cost plastic housing  Choice of filter or unfiltered Product Photo Here Description:


    Original     		PDF OPB711, OPB712 OPB711 OPB712 OPB711â

    QP508FB

    Abstract: No abstract text available
    Text: . O PTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • • Flat lensed for w ide acceptance angle Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched


    OCR Scan     		PDF OP508F OP508FA, QP508FB, OP168F P268F OP508F 0Q02b20 QP508FB

    OP508FA

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC DfaE D | blTflSäO DDDGISE 3 | g O p to e le c tr o n ic * D i v i i i o n T R W Electronic Components Group Product Bulletin 5 1 1 2 mmm « v v a _ T - 4 1 - U I January 1985 N P N Silicon Phototransistors Types OP5Q8FC, OP508FB, OP508FA


    OCR Scan     		PDF 0P16BF /CKT2-RF-10K OP508FA

    OP168F

    Abstract: OP290C OP508F OP508FA OP508FB OP508FC
    Text: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP5Q8FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched


    OCR Scan     		PDF OP508F OP508FA, OP508FB, OP508FC OP168F OP268F OP290C OP290C OP508FA OP508FB OP508FC

    Untitled

    Abstract: No abstract text available
    Text: OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP508FA, QP508FB, OP508FC Features • Flat lensed for wide acceptance angle • Easily stackable on 0.100 inch 2.54 mm hole centers • Low cost plastic package • Mechanically and spectrally matched


    OCR Scan     		PDF OP508F OP508FA, QP508FB, OP508FC P268F P290C

    Untitled

    Abstract: No abstract text available
    Text: OPTEK TECHNOLOGY INC DL.E D | bTiflSflO DDDGISE 3 | O p to e le c tro n ic * D iv i ii o n TRW Electronic Components Group M i f l h 'w gg Product Bulletin 5 1 1 2 _ _ _ mmm • ■ . Ja nu ary 1985 NPN Silicon Phototransistors Types OP5Q8FC, OP508FB, OP508FA


    OCR Scan     		PDF OP508FB, OP508FA

    OP168F

    Abstract: OP508F OP508FA OP508FB OP508FC
    Text: 0 OPTEK Product Bulletin OP508F June 1996 NPN Silicon Phototransistors Types OP5Q8FA, OP5Q8FB, OP5Q8FC .0 6 5 .0 5 5 ( 1 .6 5 ( 1 .4 0 ) .1 2 0 (3 .0 5) ' :T 0R- v .1 0 0 ( 2 .5 4 ) NGM = + - / / - J_ OPTICAL C. .0 3 5 .0 2 5 (0 .8 9 ) (0 .6 4 )


    OCR Scan     		PDF OP508F OP508FA, OP508FB, OP508FC OP168F OP268F OP508FA OP508FB OP508FC

    OP268FA

    Abstract: OP268FB OP268FC OP508F OP538F
    Text: OPTEK Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC • Flat lensed for wide radiation angle • Easily stackable on 0.100" 2.54 mm hole centers • Mechanically and spectrally matched to the OP508F series phototransistor


    OCR Scan     		PDF OP268F OP268FA, OP268FB, OP268FC OP508F OP538F OP268FA OP268FB OP268FC

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    OP268FA

    Abstract: No abstract text available
    Text: @ OPTEK Product Bulletin OP268F April 1993 ^ GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC DIMENSIONS ARE III INCHES IMILLIMETERSi 'FDR IDENTIFICATION PURPOSES. ANODE LEAD IS .06 I I . 52! NOM. LONGER THAN CATHODE LEAD Features Absolute Maximum Ratings Ta = 25°C unless otherwise noted


    OCR Scan     		PDF OP268F OP268FA, OP268FB, OP268FC OP508F OP538F OP268FA

    KT853

    Abstract: OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250
    Text: S7E D 'PTEK TECHNOLOGY INC PART NUMBER REPLACED BY REPLACES • bTTflSflQ OOOllbS 0 PART NUMBER PAGE REPLACED BY REPLACES ■ PAGE *>|J M / I t '“0 ^ 1N SERIES NO CHANGE a 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE


    OCR Scan     		PDF 6N140ATXV 3N243 3N244 3N245 CNY17/T CNY17/2 CNY17/3 CNY17/4 3N243TX 3N244TX KT853 OPB915S10 OH90U OPI1265 K9000 OP269SLB OP269SLC sla 9030 K8102 opi3250

    KT853

    Abstract: KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2
    Text: >PTEK TECHNOLOGY S7E IN C D • b7TA 5ôü O O O l l b a □ PAGE PART NUMBER REPLACED BY NO CHANGE it 6N140ATXV NEU 2N SERIES NO CHANGE * CLVA SERIES NO CHANGE 3N243 3N244 3N245 NO CHANGE NO CHANGE NO CHANGE 12-4 12-4 12-4 CNY17/Î CNY17/2 CNY17/3 CNY17/4


    OCR Scan     		PDF 3N243 3N244 3N245 3N243TX 3N243R 3N244TX 3N244R 3N245TX 3N245R KT853 KT853A OH90U KT826 K8702 KT850B KT8150 KT851A KR8803 kt853a2

    OP168F

    Abstract: OP168FA OP168FB OP168FC OP508F OP538F 300pps Infrared Emitting Diodes
    Text: OPTEK Product Bulletin OP168F June 1996 GaAs Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC .065 1.65 .055 (1.40) .130 (3.30) .120 (3.05)' EMITTING SURFACE □ •165 (4.19) .155 (3.94) .090 (2.29) .070 (1.78) .100 (2.54) NOM J_ T


    OCR Scan     		PDF OP168F OP168FA, OP168FB, OP168FC OP508F OP538F 0P16BF QP508F/OP538F TA-25Â OP168FA OP168FB OP168FC 300pps Infrared Emitting Diodes

    Untitled

    Abstract: No abstract text available
    Text: 0 O P T E K Product Bulletin OP268F June 1996 GaAIAs Plastic Infrared Emitting Diodes Types OP268FA, OP268FB, OP268FC Features • Flat tensed for wide radiation angle • Easily stackable on 0.100’ (2.54 mm hole centers • Mechanically and spectrally matched


    OCR Scan     		PDF OP268F OP268FA, OP268FB, OP268FC OP508F-series OP538F 300pps)